E-LIB Suche - Ergebnisse für: Treidel, E. Bahat

1

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline..:

Wolf, M. ; Brunner, F. ; Last, C....
IEEE Electron Device Letters. 45 (2024) 6 - p. 1048-1051 , 2024

Link: https://doi.org/10.1109/..

2

Optimization of Vertical GaN Drift Region Layers for Avalan..:

Brusaterra, E. ; Bahat Treidel, E. ; Brunner, F....
IEEE Electron Device Letters. 44 (2023) 3 - p. 388-391 , 2023

Link: https://doi.org/10.1109/..

3

Isolation properties and failure mechanisms of vertical Pt ..:

Fregolent, M. ; Boito, M. ; Marcuzzi, A....
Microelectronics Reliability. 138 (2022) - p. 114644 , 2022

Link: https://doi.org/10.1016/..

4

The influence of the gate trench orientation to the crystal..:

, In: 2020 Device Research Conference (DRC),

Treidel, E. Bahat ; Hilt, O. ; Christopher, H.... - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

5

Vertical GaN MISFET for chip‐on‐chip high speed laser drivi..:

Bahat Treidel, E. ; Christopher, H. ; Hilt, O....
Electronics Letters. 56 (2020) 20 - p. 1084-1086 , 2020

Link: https://doi.org/10.1049/..

6

Vertical GaN n-channel MISFETs on ammonothermal GaN substra..:

Treidel, E. Bahat ; Hilt, O. ; Wolf, M....
Materials Science in Semiconductor Processing. 91 (2019) - p. 146-150 , 2019

Link: https://doi.org/10.1016/..

7

Temperature dependent dynamic on-state resistance in GaN-on..:

Bahat Treidel, E. ; Hilt, O. ; Bahat Treidel, O..
Microelectronics Reliability. 64 (2016) - p. 556-559 , 2016

Link: https://doi.org/10.1016/..

8

Effect of barrier recess on transport and electrostatic int..:

Capriotti, M. ; Bahat Treidel, E. ; Fleury, C....
Solid-State Electronics. 125 (2016) - p. 118-124 , 2016

Link: https://doi.org/10.1016/..

9

Normally-off GaN-HEMTs with p-type gate: Off-state degradat..:

Meneghini, M. ; Hilt, O. ; Fleury, C....
Microelectronics Reliability. 58 (2016) - p. 177-184 , 2016

Link: https://doi.org/10.1016/..

10

Investigation of gate-diode degradation in normally-off p-G..:

Ťapajna, M. ; Hilt, O. ; Bahat-Treidel, E...
Applied Physics Letters. 107 (2015) 19 - p. , 2015

Link: https://doi.org/10.1063/..

11

Normally-off GaN Transistors for Power Applications:

Hilt, O ; Bahat-Treidel, E ; Brunner, F...
Journal of Physics: Conference Series. 494 (2014) - p. 012001 , 2014

Link: https://doi.org/10.1088/..

12

Effect of gate trench fabrication technology on reliability..:

Chevtchenko, S.A. ; Schulz, M. ; Bahat-Treidel, E....
Microelectronics Reliability. 54 (2014) 9-10 - p. 2191-2195 , 2014

Link: https://doi.org/10.1016/..

13

Vertical Blocking Voltage Improvement of GaN HEMT Structure..:

Kotara, P. ; Zhytnytska, R. ; Hilt, O....
ECS Journal of Solid State Science and Technology. 2 (2013) 8 - p. N3064-N3067 , 2013

Link: https://doi.org/10.1149/..

14

Single- and double-heterostructure GaN-HEMTs devices for po..:

Zanandrea, A. ; Bahat-Treidel, E. ; Rampazzo, F....
Microelectronics Reliability. 52 (2012) 9-10 - p. 2426-2430 , 2012

Link: https://doi.org/10.1016/..

15

Fast-Switching GaN-Based Lateral Power Schottky Barrier Dio..:

Bahat-Treidel, E. ; Hilt, Oliver ; Zhytnytska, Rimma...
IEEE Electron Device Letters. 33 (2012) 3 - p. 357-359 , 2012

Link: https://doi.org/10.1109/..