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1

Endurance and targeted programming behavior of HfO2-FeFETs:

, In: 2020 IEEE International Memory Workshop (IMW),

Zhou, Haidi ; Ocker, Johannes ; Mennenga, Menno... - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

2

HfO2-based ferroelectric FETs: Performance of single device..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),

Mulaosmanovic, Halid ; Muller, Franz ; Breyer, Evelyn T.... - p. 146-147 , 2020

Link: https://doi.org/10.1109/..

3

FeFET: A versatile CMOS compatible device with game-changin..:

, In: 2020 IEEE International Memory Workshop (IMW),

Beyer, Sven ; Dunkel, Stefan ; Trentzsch, Martin... - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

4

Frequency Mixing with HfO2-Based Ferroelectric Transistors:

Mulaosmanovic, Halid ; Dünkel, Stefan ; Trentzsch, Martin...
ACS Applied Materials & Interfaces. 12 (2020) 40 - p. 44919-44925 , 2020

Link: https://doi.org/10.1021/..

5

Structural and Electrical Comparison of Si and Zr Doped Haf..:

Lederer, Maximilian ; Kämpfe, Thomas ; Vogel, Norman...
Nanomaterials. 10 (2020) 2 - p. 384 , 2020

Link: https://doi.org/10.3390/..

6

Compact FeFET Circuit Building Blocks for Fast and Efficien..:

Breyer, Evelyn T. ; Mulaosmanovic, Halid ; Trommer, Jens...
IEEE Journal of the Electron Devices Society. 8 (2020) - p. 748-756 , 2020

Link: https://doi.org/10.1109/..

7

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fas..:

Reis, Dayane ; Datta, Suman ; Niemier, Michael T....
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. 5 (2019) 2 - p. 103-112 , 2019

Link: https://doi.org/10.1109/..

8

Defect generation and activation processes in HfO2thin film..:

Öttking, Rolf ; Kupke, Steve ; Nadimi, Ebrahim...
physica status solidi (a). 212 (2015) 3 - p. 547-553 , 2015

Link: https://doi.org/10.1002/..

9

A quantitative study of Phosphorous implantation damage on ..:

Wan, Xinggong ; Chandrashekhar, Sandhya ; Bayha, Boris...
Microelectronics Reliability. 54 (2014) 9-10 - p. 2306-2309 , 2014

Link: https://doi.org/10.1016/..

10

Downscaling ferroelectric field effect transistors by using..:

Martin, Dominik ; Yurchuk, Ekaterina ; Müller, Stefan...
Solid-State Electronics. 88 (2013) - p. 65-68 , 2013

Link: https://doi.org/10.1016/..

11

Interaction of oxygen vacancies and lanthanum in Hf-based h..:

Nadimi, Ebrahim ; Öttking, Rolf ; Plänitz, Philipp...
Journal of Physics: Condensed Matter. 23 (2011) 36 - p. 365502 , 2011

Link: https://doi.org/10.1088/..

12

Physical and Electrical Properties of MOCVD and ALD Deposit..:

Kelwing, Torben ; Mutas, Sergej ; Trentzsch, Martin...
ECS Transactions. 33 (2010) 3 - p. 3-14 , 2010

Link: https://doi.org/10.1149/..

13

Ultra-dense co-integration of FeFETs and CMOS logic enablin..:

Breyer, Evelyn T ; Mulaosmanovic, Halid ; Trommer, Jens...
978-1-7281-1539-9. , 2019

Link: https://nbn-resolving.or..

14

Structural and Electrical Comparison of Si and Zr Doped Haf..:

Maximilian Lederer ; Thomas Kämpfe ; Norman Vogel...
https://dx.doi.org/10.3390/nano10020384. , 2020

Link: https://doi.org/10.3390/..

15

Structural and Electrical Comparison of Si and Zr Doped Haf..:

Maximilian Lederer ; Thomas Kämpfe ; Norman Vogel...
https://www.mdpi.com/2079-4991/10/2/384. , 2020

Link: https://doi.org/10.3390/..

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