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Triozon, François
107  Ergebnisse:
Personensuche X
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1

Exploring charge hopping transport in amorphous HfO2: An ap..:

Hirchaou, Youssef ; Sklénard, Benoît ; Goes, Wolfgang...
Applied Physics Letters.  124 (2024)  5 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement ..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Bedecarrats, Thomas ; Triozon, Francois ; Martinie, Sebastien.. - p. 125-128 , 2023
Link: https://doi.org/10.23919..
 
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3

Calculation of the mobility in Al2O3/GaN electron channel: ..:

Rrustemi, Bledion ; Triozon, François ; Jaud, Marie-Anne..
Solid-State Electronics.  198 (2022)  - p. 108470 , 2022
Link: https://doi.org/10.1016/..
 
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4

Electronic and thermal properties of GeTe/Sb2Te3 superlatti..:

Sklénard, Benoît ; Triozon, François ; Sabbione, Chiara...
Applied Physics Letters.  119 (2021)  20 - p. , 2021
Link: https://doi.org/10.1063/..
 
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5

Investigation on interface charges in SiN/AlxGa1−xN/GaN het..:

Rrustemi, Bledion ; Jaud, Marie-Anne ; Triozon, François...
Journal of Applied Physics.  130 (2021)  10 - p. , 2021
Link: https://doi.org/10.1063/..
 
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6

MOS-like approach for compact modeling of High-Electron-Mob..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Vaysset, Adrien ; Martinie, Sebastien ; Triozon, Francois... - p. 221-224 , 2020
Link: https://doi.org/10.23919..
 
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7

Impact of edge roughness on the electron transport properti..:

Park, Jejune ; Mouis, Mireille ; Triozon, François.
Journal of Applied Physics.  124 (2018)  22 - p. , 2018
Link: https://doi.org/10.1063/..
 
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8

Optical vs electronic gap of hafnia by ab initio Bethe-Salp..:

Sklénard, Benoît ; Dragoni, Alberto ; Triozon, François.
Applied Physics Letters.  113 (2018)  17 - p. , 2018
Link: https://doi.org/10.1063/..
 
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9

Carrier scattering in high-κ/metal gate stacks:

Zeng, Zaiping ; Triozon, François ; Niquet, Yann-Michel
Journal of Applied Physics.  121 (2017)  11 - p. , 2017
Link: https://doi.org/10.1063/..
 
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10

Electronic structure and electron mobility in Si1– xGex nan..:

Mugny, Gabriel ; Li, Jing ; Triozon, François...
Applied Physics Letters.  110 (2017)  5 - p. , 2017
Link: https://doi.org/10.1063/..
 
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11

Contact resistances in trigate and FinFET devices in a non-..:

Bourdet, Léo ; Li, Jing ; Pelloux-Prayer, Johan...
Journal of Applied Physics.  119 (2016)  8 - p. , 2016
Link: https://doi.org/10.1063/..
 
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12

Simulation of transport in nanodevices 

Nanoscience and nanotechnology series
Triozon, François ; Dollfus, Philippe , 2016
Link: https://onlinelibrary.wi..
 
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13

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effe..:

Lavieville, Romain ; Triozon, François ; Barraud, Sylvain...
Nano Letters.  15 (2015)  5 - p. 2958-2964 , 2015
Link: https://doi.org/10.1021/..
 
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14

Quantum calculations of the carrier mobility: Methodology, ..:

Niquet, Yann-Michel ; Nguyen, Viet-Hung ; Triozon, François...
Journal of Applied Physics.  115 (2014)  5 - p. , 2014
Link: https://doi.org/10.1063/..
 
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15

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire ..:

Voisin, Benoit ; Nguyen, Viet-Hung ; Renard, Julien...
Nano Letters.  14 (2014)  4 - p. 2094-2098 , 2014
Link: https://doi.org/10.1021/..
 
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