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2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS) ,
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A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide ..:
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2023 IEEE International Reliability Physics Symposium (IRPS) ,
3
Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFE..:
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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
4
Characterization of 4H-SiC PMOSFET with P+ Poly-Si Gate:
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2023 35th International Conference on Microelectronic Test Structure (ICMTS) ,
5
A multi-contact six-terminal cross-bridge Kelvin resistor (..:
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2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ,
6
Investigation of Positive Bias Temperature Instability of 4..:
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2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ,
8
A Study on the Impact of Gamma Rays Irradiation on 4H-SiC C..:
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2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS) ,
10
An Evaluation for Quality Inspection of Epitaxial Layer and..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
11
Dual Gate Oxide CMOS Process on 4H-SiC:
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2022 International Electron Devices Meeting (IEDM) ,
12
Design and Characterization of the Junction Isolation Struc..:
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2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ,
14
Device isolation process for 4H-SiC CMOS ICs:
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