Tsutsumi, Takuya
297  Ergebnisse:
Personensuche X
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1

220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technolo..:

Jyo, Teruo ; Hamada, Hiroshi ; Tsutsumi, Takuya...
IEEE Transactions on Microwave Theory and Techniques.  72 (2024)  1 - p. 516-524 , 2024
 
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Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron..:

Park, Wan-Soo ; Jo, Hyeon-Bhin ; Kim, Hyo-Jin...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 2081-2089 , 2023
 
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220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technolo..:

, In: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
Jyo, Teruo ; Hamada, Hiroshi ; Tsutsumi, Takuya... - p. 680-683 , 2023
 
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9

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Im..:

Amir, Walid ; Shin, Ju-Won ; Shin, Ki-Yong...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 2988-2993 , 2023
 
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11

A New Methodology to Analyze Carrier Transport Properties f..:

Kim, Hyo-Jin ; Yoo, Ji-Hoon ; Park, Wan-Soo...
IEEE Electron Device Letters.  44 (2023)  2 - p. 229-232 , 2023
 
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12

Cutting-edge THz Devices as Essential Parts of IOWN - Innov..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Tsutsumi, Takuya - p. 1-4 , 2023
 
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