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Tu, Po-Tsung
1919  Ergebnisse:
Personensuche X
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1

Investigating the effect of O2 plasma treatment on the oper..:

Liu, An-Chen ; Huang, Yu-Wen ; Chen, Hsin-Chu...
Semiconductor Science and Technology.  , 2024
Link: https://doi.org/10.1088/..
 
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2

Effects of Channel Thickness on DC/RF Performance of InAlGa..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Shieh, De ; Lee, Zheng-Fong ; Lee, Ming-Yuan... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

Investigation of AIGaN/GaN MISHEMTs with Varied AIGaN Barri..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Liu, An-Chen ; Chen, Hsin-Chu ; Tu, Po-Tsung... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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4

GaN on Si RF performance with different AlGaN back barrier:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Hsieh, Chang-Yan ; Chen, Hui-Yu ; Tu, Po-Tsung... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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5

Effect of O2 plasma surface treatment on gate leakage curre..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Liu, An-Chen ; Huang, Yu-Wen ; Lin, Chao-Hsu... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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6

Improving Performance and Breakdown Voltage in Normally-Off..:

Liu, An-Chen ; Tu, Po-Tsung ; Chen, Hsin-Chu...
Micromachines.  14 (2023)  8 - p. 1582 , 2023
Link: https://doi.org/10.3390/..
 
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7

AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resis..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Chen, Hui-Yu ; Tu, Po-Tsung ; Yeh, Po-Chun... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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8

AlInGaN/GaN HEMTs With High Johnson's Figure-of-Merit on Lo..:

Sanyal, Indraneel ; Lin, En-Shuo ; Wan, Yu-Chen...
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 130-136 , 2021
Link: https://doi.org/10.1109/..
 
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9

CMOS-compatible GaN HEMT on 200mm Si-substrate for RF appli..:

, In: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Yeh, Po-Chun ; Tu, Po-Tsung ; Liu, Hsueh-Hsing... - p. 1-2 , 2021
Link: https://doi.org/10.1109/..
 
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10

The Evolution of Manufacturing Technology for GaN Electroni..:

Liu, An-Chen ; Tu, Po-Tsung ; Langpoklakpam, Catherine...
Micromachines.  12 (2021)  7 - p. 737 , 2021
Link: https://doi.org/10.3390/..
 
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11

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-..:

Hsu, Lung-Hsing ; Lai, Yung-Yu ; Tu, Po-Tsung...
Micromachines.  12 (2021)  10 - p. 1159 , 2021
Link: https://doi.org/10.3390/..
 
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12

Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Tu, Po-Tsung ; Sanyal, Indraneel ; Yeh, Po-Chun... - p. 130-131 , 2020
Link: https://doi.org/10.1109/..
 
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13

Improving the off-state characteristics and dynamic on-resi..:

Lee, Geng-Yen ; Tu, Po-Tsung ; Chyi, Jen-Inn
Applied Physics Express.  8 (2015)  6 - p. 064102 , 2015
Link: https://doi.org/10.7567/..
 
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14

(Invited) Growth and Characterization of High Power AlInN/G..:

Chyi, Jen-Inn ; Lee, Geng-Yen ; Tu, Po-Tsung.
ECS Transactions.  61 (2014)  4 - p. 3-8 , 2014
Link: https://doi.org/10.1149/..
 
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15

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-..:

Hsu, Lung-Hsing ; Lai, Yung-Yu ; Tu, Po-Tsung...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541231/.  , 2021
Link: http://www.ncbi.nlm.nih...
 
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