E-LIB Suche - Ergebnisse für: Tu, Shang-Ju

1

InGaN-based light-emitting diodes with Al content graded p-..:

Lee, Ming- Lun ; Tu, Shang-Ju ; Sheu, Jinn-Kong
Physica E: Low-dimensional Systems and Nanostructures. 143 (2022) - p. 115352 , 2022

Link: https://doi.org/10.1016/..

2

High-temperature carrier density and mobility enhancements ..:

Ko, Tsung-Shine ; Lin, Der-Yuh ; Lin, Chia-Feng...
Journal of Crystal Growth. 464 (2017) - p. 175-179 , 2017

Link: https://doi.org/10.1016/..

3

White emission from non-planar InGaN/GaN MQW LEDs grown on ..:

Lee, Ming-Lun ; Yeh, Yu-Hsiang ; Tu, Shang-Ju...
Optics Express. 23 (2015) 7 - p. A401 , 2015

Link: https://doi.org/10.1364/..

4

Dual-wavelength GaN-based LEDs grown on truncated hexagonal..:

Lee, Ming-Lun ; Yeh, Yu-Hsiang ; Tu, Shang-Ju...
Optics Express. 21 (2013) S5 - p. A864 , 2013

Link: https://doi.org/10.1364/..

5

Femtosecond excitation of radial breathing mode in 2-D arra..:

Chen, Hung-Pin ; Wu, Yueh-Chun ; Mante, Pierre Adrien...
Optics Express. 20 (2012) 15 - p. 16611 , 2012

Link: https://doi.org/10.1364/..

6

Vertical InGaN light-emitting diodes with Ag paste as bondi..:

Yang, Y.C. ; Sheu, Jinn-Kong ; Lee, Ming-Lun...
Microelectronics Reliability. 52 (2012) 5 - p. 949-951 , 2012

Link: https://doi.org/10.1016/..

7

Gallium nitride-based light-emitting diodes with embedded a..:

Sheu, Jinn-Kong ; Tu, Shang-Ju ; Yeh, Yu-Hsiang..
Applied Physics Letters. 101 (2012) 15 - p. , 2012

Link: https://doi.org/10.1063/..

8

Optical properties of Mn in regrown GaN-based epitaxial lay..:

Huang, Feng-Wen ; Sheu, Jinn-Kong ; Tu, Shang-Ju...
Optical Materials Express. 2 (2012) 4 - p. 469 , 2012

Link: https://doi.org/10.1364/..

9

Enhanced output power of GaN-based LEDs with embedded AlGaN..:

Tu, Shang-Ju ; Sheu, Jinn-Kong ; Lee, Ming-Lun...
Optics Express. 19 (2011) 13 - p. 12719 , 2011

Link: https://doi.org/10.1364/..

10

Optical and Electrical Properties of µ-Slice InGaN/GaN Ligh..:

Hsu, Che-Kang ; Sheu, Jinn-Kong ; Wang, Jia-Kuen...
Applied Physics Express. 4 (2011) 3 - p. 032104 , 2011

Link: https://doi.org/10.1143/..

11

Vertical InGaN light-emitting diodes with a sapphire-face-u..:

Yang, Y.C. ; Sheu, Jinn-Kong ; Lee, Ming-Lun...
Optics Express. 20 (2011) S1 - p. A119 , 2011

Link: https://doi.org/10.1364/..

12

Linear photon up-conversion of 450 meV in InGaN/GaN multipl..:

Huang, Feng-Wen ; Sheu, Jinn-Kong ; Lee, Ming-Lun...
Optics Express. 19 (2011) S6 - p. A1211 , 2011

Link: https://doi.org/10.1364/..

13

Characteristics of Slice InGaN/GaN Light Emitting Diodes by..:

Hsu, Che-Kang ; Sheu, Jinn-Kong ; Wang, Jia-Kuen...
Electrochemical and Solid-State Letters. 14 (2011) 8 - p. H343 , 2011

Link: https://doi.org/10.1149/..

14

Characteristics of InGaN-based concentrator solar cells ope..:

Yang, Chih-Ciao ; Jang, C. H. ; Sheu, Jinn-Kong...
Optics Express. 19 (2011) S4 - p. A695 , 2011

Link: https://doi.org/10.1364/..

15

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes fo..:

Chang, Kuo-Hua ; Sheu, Jinn-Kong ; Lee, Ming-Lun...
Applied Physics Letters. 97 (2010) 1 - p. , 2010

Link: https://doi.org/10.1063/..