Tyaginov, Stanislav
32  Ergebnisse:
Personensuche X
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4

TCAD Modeling of Temperature Activation of the Hysteresis C..:

Vasilev, Alexander ; Jech, Markus ; Grill, Alexander...
IEEE Transactions on Electron Devices.  69 (2022)  6 - p. 3290-3295 , 2022
 
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5

The properties, effect and extraction of localized defect p..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
 
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7

The Influence of Gate Bias on the Anneal of Hot-Carrier Deg..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
 
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8

A Compact Physics Analytical Model for Hot-Carrier Degradat..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
 
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9

Mixed Hot-Carrier/Bias Temperature Instability Degradation ..:

Jech, Markus ; Rott, Gunnar ; Reisinger, Hans...
IEEE Transactions on Electron Devices.  67 (2020)  8 - p. 3315-3322 , 2020
 
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10

Modeling the Hysteresis of Current-Voltage Characteristics ..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
 
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12

A physics-aware compact modeling framework for transistor a..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Wu, Zhicheng ; Linten, Dimitri ; Kaczer, Ben... - p. 21.2.1-21.2.4 , 2019
 
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13

On Correlation between Hot-Carrier Stress Induced Device Pa..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
 
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15

On the limits of applicability of drift-diffusion based hot..:

Jech, Markus ; Sharma, Prateek ; Tyaginov, Stanislav..
Japanese Journal of Applied Physics.  55 (2016)  4S - p. 04ED14 , 2016
 
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