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Uccelli, E.
270  Ergebnisse:
Personensuche X
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1

Electrical characterisation of InGaAs on insulator structur..:

Cherkaoui, K. ; Gomeniuk, Y.Y. ; Daix, N....
Microelectronic Engineering.  147 (2015)  - p. 63-66 , 2015
Link: https://doi.org/10.1016/..
 
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2

Strain relaxation of GaAs/Ge crystals on patterned Si subst..:

Taboada, A. G. ; Kreiliger, T. ; Falub, C. V....
Applied Physics Letters.  104 (2014)  2 - p. , 2014
Link: https://doi.org/10.1063/..
 
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3

Towards large size substrates for III-V co-integration made..:

Daix, N. ; Uccelli, E. ; Czornomaz, L....
APL Materials.  2 (2014)  8 - p. 086104 , 2014
Link: https://doi.org/10.1063/..
 
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4

Charge carrier generation, relaxation, and recombination in..:

Corfdir, P. ; Van Hattem, B. ; Uccelli, E...
Applied Physics Letters.  103 (2013)  13 - p. , 2013
Link: https://doi.org/10.1063/..
 
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5

(Invited) Physical and Electrical Properties of Scaled Gate..:

Marchiori, Chiara ; El Kazzi, M. ; Czornomaz, L....
ECS Transactions.  58 (2013)  7 - p. 369-378 , 2013
Link: https://doi.org/10.1149/..
 
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6

Nanoscale physics and defect state chemistry at amorphous-S..:

Marchiori, C ; El Kazzi, M ; Czornomaz, L...
Journal of Physics D: Applied Physics.  47 (2013)  5 - p. 055101 , 2013
Link: https://doi.org/10.1088/..
 
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7

Exciton localization mechanisms in wurtzite/zinc-blende GaA..:

Graham, A. M. ; Corfdir, P. ; Heiss, M....
Physical Review B.  87 (2013)  12 - p. , 2013
Link: https://doi.org/10.1103/..
 
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8

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs..:

Richter, M. ; Uccelli, E. ; Taboada, A.G....
Journal of Crystal Growth.  378 (2013)  - p. 109-112 , 2013
Link: https://doi.org/10.1016/..
 
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9

Compensation mechanism in silicon-doped gallium arsenide na..:

Ketterer, B. ; Mikheev, E. ; Uccelli, E..
Applied Physics Letters.  97 (2010)  22 - p. , 2010
Link: https://doi.org/10.1063/..
 
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10

Gekoppelte Quantenpunkttransistoren in präziser Kettenanor.. 

(Schlussbericht ...) 
Uccelli, E. , [ca. 2009]
Link: http://edok01.tib.uni-ha..
 
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11

A level set simulation for ordering of quantum dots via cle..:

Niu, X. B. ; Uccelli, E. ; Fontcuberta i Morral, A..
Applied Physics Letters.  95 (2009)  2 - p. , 2009
Link: https://doi.org/10.1063/..
 
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12

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowir..:

Zardo, I. ; Conesa-Boj, S. ; Peiro, F....
Physical Review B.  80 (2009)  24 - p. , 2009
Link: https://doi.org/10.1103/..
 
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13

Growth mechanisms of self-assembled InAs quantum dots on (1..:

Uccelli, E. ; Nürnberger, S. ; Bichler, M...
Superlattices and Microstructures.  44 (2008)  4-5 - p. 425-430 , 2008
Link: https://doi.org/10.1016/..
 
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14

Controlled positioning of self-assembled InAs quantum dots ..:

Schuh, D. ; Bauer, J. ; Uccelli, E....
Physica E: Low-dimensional Systems and Nanostructures.  26 (2005)  1-4 - p. 72-76 , 2005
Link: https://doi.org/10.1016/..
 
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15

Long-range ordered self-assembled InAs quantum dots epitaxi..:

Bauer, J. ; Schuh, D. ; Uccelli, E....
Applied Physics Letters.  85 (2004)  20 - p. 4750-4752 , 2004
Link: https://doi.org/10.1063/..
 
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