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Udrea, Florin
190  Ergebnisse:
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1

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluate..:

Wang, Bixuan ; Zhang, Ruizhe ; Song, Qihao...
IEEE Transactions on Power Electronics.  39 (2024)  5 - p. 5576-5589 , 2024
Link: https://doi.org/10.1109/..
 
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2

Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT ..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),
Wang, Bixuan ; Song, Qihao ; Mukherjee, Kalparupa... - p. 761-766 , 2024
Link: https://doi.org/10.1109/..
 
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3

Numerical Simulation and Analytical Modeling of Multichanne..:

He, Quanbo ; Wang, Hengyu ; Xiao, Ming...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1710-1717 , 2024
Link: https://doi.org/10.1109/..
 
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4

1 kV Self-Aligned Vertical GaN Superjunction Diode:

Ma, Yunwei ; Porter, Matthew ; Qin, Yuan...
IEEE Electron Device Letters.  45 (2024)  1 - p. 12-15 , 2024
Link: https://doi.org/10.1109/..
 
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5

On the Superior Reverse Recovery Properties of Silicon Part..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Antoniou, Marina ; Udugampola, Nishad ; Udrea, Florin.. - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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6

Experimental Investigation of a Novel 750V SJ-RET-IGBTs (Su..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Su, Arthur ; Guan, Jianing ; Qin, Rongzhen.. - p. 29-32 , 2024
Link: https://doi.org/10.1109/..
 
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7

3D TACD Modelling of Multi-channel Tri-gate Normally-off Al..:

, In: 2023 International Semiconductor Conference (CAS),
He, Quanbo ; Wang, Hengyu ; Udrea, Florin - p. 149-152 , 2023
Link: https://doi.org/10.1109/..
 
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8

Micromachined Thermal Gas Sensors—A Review:

Gardner, Ethan L. W. ; Gardner, Julian W. ; Udrea, Florin
Sensors.  23 (2023)  2 - p. 681 , 2023
Link: https://doi.org/10.3390/..
 
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9

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approa..:

Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina...
Key Engineering Materials.  946 (2023)  - p. 125-133 , 2023
Link: https://doi.org/10.4028/..
 
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10

Adaptive 3-Mode Thermal Flow and Velocity Sensor:

, In: 2023 IEEE SENSORS,
Gardner, Ethan L.W. ; Rosser, Chris ; Hardie, Jonathan... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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11

Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Pow..:

Wang, Bixuan ; Zhang, Ruizhe ; Wang, Hengyu...
IEEE Electron Device Letters.  44 (2023)  2 - p. 217-220 , 2023
Link: https://doi.org/10.1109/..
 
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12

ICeGaNTM technology: The easy-to-use and self-protected GaN..:

Longobardi, Giorgia ; Efthymiou, Loizos ; Findlay, John...
Power Electronic Devices and Components.  4 (2023)  - p. 100028 , 2023
Link: https://doi.org/10.1016/..
 
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13

3D simulation study of 375V partial SOI SJ LDNMOS BDS limit..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Ching Tee, Elizabeth Kho ; Antoniou, Marina ; Green, David.. - p. 278-281 , 2023
Link: https://doi.org/10.1109/..
 
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14

Gate Ringing in Superjunction MOSFETs with a Parasitic Capa..:

Kang, Hyemin ; Udrea, Florin
Power Electronic Devices and Components.  4 (2023)  - p. 100029 , 2023
Link: https://doi.org/10.1016/..
 
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15

Experimental Demonstration of Point-Injection Trench IGBT C..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Buitrago, Elizabeth ; Antoniou, Marina ; Schneider, Nick... - p. 179-182 , 2023
Link: https://doi.org/10.1109/..
 
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