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X
Ueno, Tomo
87  Ergebnisse:
Personensuche X
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1

Research on structural stabilization method of GeO2 film an..:

, In: 2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Iino, Hirotaka ; Shibuya, Takehito ; Iwazaki, Yoshitaka. - p. 106-109 , 2022
Link: https://doi.org/10.23919..
 
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2

Effect of high temperature homoepitaxial growth of β-Ga2O3 ..:

Ikenaga, Kazutada ; Tanaka, Nami ; Nishimura, Taro...
Journal of Crystal Growth.  582 (2022)  - p. 126520 , 2022
Link: https://doi.org/10.1016/..
 
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3

Activation of 300-mm-Diameter-Phosphorus-Implanted Silicon ..:

, In: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Saito, Sohei ; Onodera, Ko ; Miyazaki, Tomoyoshi... - p. 11-14 , 2021
Link: https://doi.org/10.23919..
 
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4

Improvement of GeO2/Ge interface characteristics by Hf-Post..:

, In: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Horiguchi, Haruka ; Ino, Hirotaka ; Iwazaki, Yoshitaka. - p. 108-111 , 2021
Link: https://doi.org/10.23919..
 
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5

Fabrication of high-performance Ge-MOS structure using Al2O..:

, In: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),
Toyoda, Kenichiro ; Ito, Keisuke ; Iwazaki, Yoshitaka. - p. 112-115 , 2021
Link: https://doi.org/10.23919..
 
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6

Characteristic Change of GeO2/Ge Interface by Hf-Post Metal..:

Fujiwara, Haruka ; Iwazaki, Yoshitaka ; Ueno, Tomo
ECS Transactions.  85 (2018)  6 - p. 43-49 , 2018
Link: https://doi.org/10.1149/..
 
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7

The Improvement of GeO2 Film Characteristics on Ge Substrat..:

Ueno, Tomo ; Niida, Jun-pei ; Yamaguchi, Marina.
ECS Transactions.  75 (2016)  8 - p. 675-681 , 2016
Link: https://doi.org/10.1149/..
 
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8

Investigation of High Current Tetracene-TFT Using Surface N..:

Nakao, Hiroki ; Hori, Kabuto ; Iwazaki, Yoshitaka.
ECS Transactions.  75 (2016)  10 - p. 81-85 , 2016
Link: https://doi.org/10.1149/..
 
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9

Water-Related Hole Traps at Thermally Grown GeO2–Ge Interfa..:

Oniki, Yusuke ; Ueno, Tomo
Japanese Journal of Applied Physics.  51 (2012)  4S - p. 04DA01 , 2012
Link: https://doi.org/10.1143/..
 
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10

Water-Related Hole Traps at Thermally Grown GeO2–Ge Interfa..:

Oniki, Yusuke ; Ueno, Tomo
Japanese Journal of Applied Physics.  51 (2012)  4S - p. 04DA01 , 2012
Link: https://doi.org/10.7567/..
 
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11

Fabrication of High-k/Ge Stacks with High Quality GeO2 Inte..:

Suzuki, Yuya ; Oniki, Yusuke ; Iwazaki, Yoshitaka.
ECS Transactions.  41 (2011)  3 - p. 29-37 , 2011
Link: https://doi.org/10.1149/..
 
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12

Generation and Controlling the Trap in Absorbent Germanium ..:

Oniki, Yusuke ; Ueno, Tomo
Applied Physics Express.  4 (2011)  8 - p. 081101 , 2011
Link: https://doi.org/10.1143/..
 
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13

Bulk and Interface Engineering of GeO2/Ge for High-κ/German..:

Oniki, Yusuke ; Iwazaki, Yoshitaka ; Ueno, Tomo
ECS Transactions.  35 (2011)  3 - p. 505-512 , 2011
Link: https://doi.org/10.1149/..
 
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14

Evaluation of GeO desorption behavior in the metal/GeO2/Ge ..:

Oniki, Yusuke ; Koumo, Hideo ; Iwazaki, Yoshitaka.
Journal of Applied Physics.  107 (2010)  12 - p. , 2010
Link: https://doi.org/10.1063/..
 
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15

Achievement of Excellent C-V Characteristics in GeO2/Ge Sys..:

Koumo, Hideo ; Suzuki, Yuya ; Oniki, Yusuke..
ECS Transactions.  33 (2010)  6 - p. 111-119 , 2010
Link: https://doi.org/10.1149/..
 
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