E-LIB Suche - Ergebnisse für: Urciuoli, Damian

1

Short-Circuit Robustness of SiC Trench MOSFETs:

Green, Ronald ; Urciuoli, Damian ; Lelis, Aivars J.
Materials Science Forum. 924 (2018) - p. 715-718 , 2018

Link: https://doi.org/10.4028/..

2

Development of a Compact, 240-kV, 10-J Impulse Generator fo..:

, In: 2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC),

Hinojosa, Miguel ; Urciuoli, Damian ; Litz, Marc... - p. 504-508 , 2018

Link: https://doi.org/10.1109/..

3

Experimental evaluation of metallic phase change materials ..:

Gonzalez-Nino, David ; Boteler, Lauren M. ; Ibitayo, Dimeji...
International Journal of Heat and Mass Transfer. 116 (2018) - p. 512-519 , 2018

Link: https://doi.org/10.1016/..

4

SiC MOSFETs designed and evaluated for linear mode operatio:

, In: 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),

O'Brien, Heather ; Ogunniyi, Aderinto ; Urciuoli, Damian.. - p. 153-157 , 2017

Link: https://doi.org/10.1109/..

5

Recovery of Bipolar-Current Induced Degradations in High-Vo..:

Veliadis, Victor ; Hearne, Harold ; Chang, W....
Materials Science Forum. 717-720 (2012) - p. 1013-1016 , 2012

Link: https://doi.org/10.4028/..

6

Avalanche Breakdown Energy in Silicon Carbide Junction Fiel..:

Hinojosa, Miguel ; Bayne, Stephen ; Veliadis, Victor.
Materials Science Forum. 717-720 (2012) - p. 1025-1028 , 2012

Link: https://doi.org/10.4028/..

7

Reliable Operation of 1200-V SiC Vertical Junction-Field-Ef..:

Lawson, Kevin ; Alvarez, G. ; Bayne, S. B....
Materials Science Forum. 717-720 (2012) - p. 1021-1024 , 2012

Link: https://doi.org/10.4028/..

8

600-V Symmetrical Bi-Directional Power Switching Using SiC ..:

Veliadis, Victor ; Urciuoli, Damian ; Ha, H.C...
Materials Science Forum. 679-680 (2011) - p. 591-594 , 2011

Link: https://doi.org/10.4028/..

9

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Ver..:

Veliadis, Victor ; Urciuoli, Damian ; Hearne, Harold...
Materials Science Forum. 645-648 (2010) - p. 1147-1150 , 2010

Link: https://doi.org/10.4028/..

10

Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:

Lelis, Aivars J. ; Urciuoli, Damian P. ; Schroen, Erik S...
IEEE Transactions on Electron Devices. 69 (2022) 10 - p. 5649-5655 , 2022

Link: https://doi.org/10.1109/..

11

Short-Circuit Robustness Testing of SiC MOSFETs:

Green, Ronald ; Urciuoli, Damian P. ; Lelis, Aivars J.
Materials Science Forum. 897 (2017) - p. 525-528 , 2017

Link: https://doi.org/10.4028/..

12

Radiation-Induced Trapped Charging Effects in SiC Power MOS..:

Green, Ronald ; Lelis, Aivars J. ; Urciuoli, Damian P...
Materials Science Forum. 778-780 (2014) - p. 533-536 , 2014

Link: https://doi.org/10.4028/..

13

Nanocrystalline material development for high-power inducto..:

Long, Jianguo ; McHenry, Mike ; Urciuoli, Damian P....
Journal of Applied Physics. 103 (2008) 7 - p. , 2008

Link: https://doi.org/10.1063/..

14

Performance of a dual, 1200 V, 400 A, silicon-carbide power..:

Urciuoli, Damian ; Green, Ronald ; Lelis, Aivars.
https://zenodo.org/record/1267549. , 2010

Link: https://zenodo.org/recor..

15

Switching Stage Design and Implementation for an Efficient ..:

Urciuoli, Damian
Thesis2.pdf. , 2003

Link: http://hdl.handle.net/10..