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V. A. Zelenin
455  Ergebnisse:
Personensuche X
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1

Local thermoelectric effects in wide-gap semiconductors:

Ordin, S. V. ; Zhilyaev, Yu. V. ; Zelenin, V. V..
Semiconductors.  51 (2017)  7 - p. 883-886 , 2017
Link: https://doi.org/10.1134/..
 
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2

Absorption spectra of bulk aluminum nitride crystals doped ..:

Zhilyaev, Yu. V. ; Zelenin, V. V. ; Mokhov, E. N....
Technical Physics Letters.  42 (2016)  2 - p. 156-159 , 2016
Link: https://doi.org/10.1134/..
 
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3

The effect of surfactants on epitaxial growth of gallium ni..:

Zhilyaev, Yu. V. ; Zelenin, V. V. ; Orlova, T. A....
Technical Physics Letters.  41 (2015)  5 - p. 476-478 , 2015
Link: https://doi.org/10.1134/..
 
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4

4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum ..:

Camara, N ; Zekentes, K ; Zelenin, V V...
Semiconductor Science and Technology.  23 (2008)  2 - p. 025016 , 2008
Link: https://doi.org/10.1088/..
 
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5

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced ..:

Lebedev, Alexander A. ; Zelenin, V.V. ; Abramov, Pavel L....
Materials Science Forum.  556-557 (2007)  - p. 175-178 , 2007
Link: https://doi.org/10.4028/..
 
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6

A study of thick 3C-SiC epitaxial layers grown on 6H-SiC su..:

Lebedev, A. A. ; Zelenin, V. V. ; Abramov, P. L....
Semiconductors.  41 (2007)  3 - p. 263-265 , 2007
Link: https://doi.org/10.1134/..
 
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7

Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown ..:

Camara, Nicolas ; Romanov, L.P. ; Kirillov, A.V....
Materials Science Forum.  556-557 (2007)  - p. 933-936 , 2007
Link: https://doi.org/10.4028/..
 
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8

Studying 3C-SiC epilayers grown on the (0001)C face of 6H-S..:

Lebedev, A. A. ; Zelenin, V. V. ; Abramov, P. L....
Technical Physics Letters.  33 (2007)  6 - p. 524-526 , 2007
Link: https://doi.org/10.1134/..
 
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9

SiC heteropolytype structures for optical applications:

, In: 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference,
Lebedev, A.A. ; Zelenin, V.V. ; Kuznetsov, A.N.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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10

The effect of hydrogen etching on the electrical properties..:

Zelenin, V. V. ; Davydov, D. V. ; Korogodskii, M. L..
Technical Physics Letters.  28 (2002)  5 - p. 382-384 , 2002
Link: https://doi.org/10.1134/..
 
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11

The effect of CVD growth conditions of 6H-SiC epilayers on ..:

Zelenin, V. V. ; Korogodskii, M. L. ; Lebedev, A. A.
Semiconductors.  35 (2001)  10 - p. 1120-1122 , 2001
Link: https://doi.org/10.1134/..
 
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12

Some aspects of SiC CVD epitaxy:

Zelenin, V. V. ; Korogodskii, M. L. ; Lebedev, A. A.
Semiconductors.  35 (2001)  10 - p. 1117-1119 , 2001
Link: https://doi.org/10.1134/..
 
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13

Investigation of 6H–SiC site competition epitaxy the silane..:

Zelenin, V.V ; Lebedev, A.A ; Rastegaeva, M.G...
Materials Science and Engineering: B.  61-62 (1999)  - p. 183-186 , 1999
Link: https://doi.org/10.1016/..
 
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14

Investigation of the effect of surface treatment of a semic..:

Lebedev, A. A. ; Davydov, D. V. ; Zelenin, V. V..
Semiconductors.  33 (1999)  8 - p. 875-876 , 1999
Link: https://doi.org/10.1134/..
 
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15

High temperature silicon carbide stabilitrons for the volta..:

Andreev, A.N. ; Anikin, M.M. ; Zelenin, V.V....
Materials Science and Engineering: B.  29 (1995)  1-3 - p. 190-193 , 1995
Link: https://doi.org/10.1016/..
 
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