E-LIB Suche - Ergebnisse für: V. Chelnokov, E

1

Physica status solidi

Volume 21, Number 1: May 1 Physica status solidi ; Volume 21, Number 1

Abdullaev, G. B ; Adamenko, A. A ; Ali, M... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

2

Aggregation of crystallins induced by pulsed laser UV light..:

Soustov, L. V. ; Chelnokov, E. V. ; Sapogova, N. V....
Biophysics. 53 (2008) 4 - p. 273-282 , 2008

Link: https://doi.org/10.1134/..

3

Two-photon pumped random laser in nanocrystalline ZnO:

Chelnokov, E. V. ; Bityurin, N. ; Ozerov, I..
Applied Physics Letters. 89 (2006) 17 - p. , 2006

Link: https://doi.org/10.1063/..

4

Wide-gap semiconductors for high-power electronics:

Lebedev, A. A. ; Chelnokov, V. E.
Semiconductors. 33 (1999) 9 - p. 999-1001 , 1999

Link: https://doi.org/10.1134/..

5

Investigation of 6H–SiC site competition epitaxy the silane..:

Zelenin, V.V ; Lebedev, A.A ; Rastegaeva, M.G...
Materials Science and Engineering: B. 61-62 (1999) - p. 183-186 , 1999

Link: https://doi.org/10.1016/..

6

Influence of growth conditions on the structural perfection..:

Andreev, A.N. ; Tregubova, A.S. ; Scheglov, M.P...
Materials Science and Engineering: B. 46 (1997) 1-3 - p. 141-146 , 1997

Link: https://doi.org/10.1016/..

7

High temperature electronics using SiC: actual situation an..:

Chelnokov, V.E. ; Syrkin, A.L.
Materials Science and Engineering: B. 46 (1997) 1-3 - p. 248-253 , 1997

Link: https://doi.org/10.1016/..

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Structural perfection of epitaxial layers of 3C-SiC grown b..:

Andreev, A. N. ; Smirnova, N. Yu. ; Tregubova, A. S...
Semiconductors. 31 (1997) 3 - p. 232-236 , 1997

Link: https://doi.org/10.1134/..

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Overview of SiC power electronics:

Chelnokov, V.E. ; Syrkin, A.L. ; Dmitriev, V.A.
Diamond and Related Materials. 6 (1997) 10 - p. 1480-1484 , 1997

Link: https://doi.org/10.1016/..

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Surface barrier height in metal-SiC structures of 6H, 4H an..:

Syrkin, A.L. ; Bluet, J.M. ; Bastide, G....
Materials Science and Engineering: B. 46 (1997) 1-3 - p. 236-239 , 1997

Link: https://doi.org/10.1016/..

11

Effect of boron diffusion on the high-voltage behavior of 6..:

Ortolland, S. ; Raynaud, C. ; Chante, J. P....
Journal of Applied Physics. 80 (1996) 9 - p. 5464-5468 , 1996

Link: https://doi.org/10.1063/..

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High temperature silicon carbide stabilitrons for the volta..:

Andreev, A.N. ; Anikin, M.M. ; Zelenin, V.V....
Materials Science and Engineering: B. 29 (1995) 1-3 - p. 190-193 , 1995

Link: https://doi.org/10.1016/..

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Surface barrier height in metal-n-6H-SiC structures:

Syrkin, A.L. ; Andreev, A.N. ; Lebedev, A.A...
Materials Science and Engineering: B. 29 (1995) 1-3 - p. 198-201 , 1995

Link: https://doi.org/10.1016/..

14

Metal–n-6H–SiC surface barrier height—Experimental data and..:

Syrkin, A. L. ; Andreev, A. N. ; Lebedev, A. A...
Journal of Applied Physics. 78 (1995) 9 - p. 5511-5514 , 1995

Link: https://doi.org/10.1063/..

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High temperature 6H-SiC dinistor:

Andreev, A.N. ; Strel'chuk, A.M. ; Savkina, N.S...
Materials Science and Engineering: B. 29 (1995) 1-3 - p. 194-197 , 1995

Link: https://doi.org/10.1016/..