E-LIB Suche - Ergebnisse für: V. Forbes

1

Calculation of strain compensation thickness for III–V semi..:

Polly, S.J. ; Bailey, C.G. ; Grede, A.J...
Journal of Crystal Growth. 454 (2016) - p. 64-70 , 2016

Link: https://doi.org/10.1016/..

2

Investigation of InAlGaAs / InGaAs quantum well solar cells:

, In: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC),

Bailey, C. G. ; Jenkins, P. P. ; Walters, R. J.... - p. 1-3 , 2015

Link: https://doi.org/10.1109/..

3

Myeloperoxidase and oxidation of uric acid in gout: implica..:

Stamp, L. K. ; Turner, R. ; Khalilova, I. S....
Rheumatology. 53 (2014) 11 - p. 1958-1965 , 2014

Link: https://doi.org/10.1093/..

4

The maritime boundaries of Malaysia and Indonesia in the Ma..:

Hamzah, B.A. ; Forbes, V.L. ; Jalil, Jalila A..
Australian Journal of Maritime & Ocean Affairs. 6 (2014) 4 - p. 207-226 , 2014

Link: https://doi.org/10.1080/..

5

Cellular Differentiation and Proliferation in the Ovine Lun..:

Martineau, H.M. ; Dagleish, M.P. ; Cousens, C....
Journal of Comparative Pathology. 149 (2013) 2-3 - p. 255-267 , 2013

Link: https://doi.org/10.1016/..

6

Reviews:

King, Bruce ; Wihbey, F. R. ; Forbes, V. L.
Journal of Spatial Science. 53 (2008) 1 - p. 152-159 , 2008

Link: https://doi.org/10.1080/..

7

Functional and structural responses of marine plankton food..:

Hjorth, M. ; Vester, J. ; Henriksen, P...
Marine Ecology Progress Series. 338 (2007) - p. 21-31 , 2007

Link: https://www.jstor.org/st..

8

Characteristics of InGaAs quantum dots grown on tensile-str..:

Kim, N. H. ; Ramamurthy, P. ; Mawst, L. J....
Journal of Applied Physics. 97 (2005) 9 - p. , 2005

Link: https://doi.org/10.1063/..

9

The effect of reactor pressure on selective area epitaxy of..:

Forbes, D.V. ; Corbett, P.B. ; Hansen, D.M....
Journal of Crystal Growth. 261 (2004) 2-3 - p. 427-432 , 2004

Link: https://doi.org/10.1016/..

10

Study of the incorporation factor (K) and its application t..:

Hansen, D.M. ; Goodnough, T.J. ; Corbett, P.B...
Journal of Crystal Growth. 261 (2004) 2-3 - p. 364-371 , 2004

Link: https://doi.org/10.1016/..

11

Developments in structural system reliability assessments o..:

Onoufriou, T ; Forbes, V.J
Reliability Engineering & System Safety. 71 (2001) 2 - p. 189-199 , 2001

Link: https://doi.org/10.1016/..

12

X-ray diffraction and channeling-Rutherford backscattering ..:

Partyka, P. ; Averback, R. S. ; Forbes, D. V...
Journal of Applied Physics. 83 (1998) 3 - p. 1265-1269 , 1998

Link: https://doi.org/10.1063/..

13

Thickness monitoring of GaAs growth by surface photoabsorpt..:

Nakamura, F. ; Kim, Y. D. ; Yoon, E...
Journal of Applied Physics. 83 (1998) 2 - p. 775-778 , 1998

Link: https://doi.org/10.1063/..

14

On the amorphization process in Al0.6Ga0.4As/GaAs heterostr..:

Turkot, B. A. ; Robertson, I. M. ; Rehn, L. E....
Journal of Applied Physics. 83 (1998) 5 - p. 2539-2547 , 1998

Link: https://doi.org/10.1063/..

15

Surface photoabsorption monitoring of the growth of GaAs an..:

Kim, Y. D. ; Nakamura, F. ; Yoon, E....
Journal of Electronic Materials. 26 (1997) 10 - p. 1164-1168 , 1997

Link: https://doi.org/10.1007/..