Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
V. Grekhov, Igor
275  Ergebnisse:
Personensuche X
?
1

3.3 kV 3.3 kA Integrated Thyristor Chip for Pulse Power App..:

, In: 2023 Seminar on Industrial Electronic Devices and Systems (IEDS),
Lyublinsky, Alexander G. ; Mikhailov, Evgeniy M. ; Zhmodikov, Alexander L.. - p. 164-166 , 2023
Link: https://doi.org/10.1109/..
 
?
2

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Di..:

Ivanov, Pavel A. ; Grekhov, Igor V. ; Potapov, Alexander S....
Materials Science Forum.  740-742 (2013)  - p. 877-880 , 2013
Link: https://doi.org/10.4028/..
 
?
3

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC ..:

Ivanov, Pavel A. ; Grekhov, Igor V.
Materials Science Forum.  740-742 (2013)  - p. 865-868 , 2013
Link: https://doi.org/10.4028/..
 
?
4

Andrei Nikolaevich Lagarkov (on his 70th birthday):

Grekhov, Igor' V ; Kisel, V N ; Pogosyan, M A...
Physics-Uspekhi.  52 (2009)  8 - p. 865-866 , 2009
Link: https://doi.org/10.3367/..
 
?
5

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes ..:

Ivanov, Pavel A. ; Grekhov, Igor V.
Materials Science Forum.  600-603 (2008)  - p. 955-958 , 2008
Link: https://doi.org/10.4028/..
 
?
6

Novel Closing Switches on the Base of Fast Ionization Front..:

, In: 2007 IEEE 34th International Conference on Plasma Science (ICOPS),
Grekhov, Igor V. ; Korotkov, Sergey V. ; Rodin, Pavel B. - p. None , 2007
Link: https://doi.org/10.1109/..
 
?
7

Nanosecond semiconductor diodes for pulsed power switching:

Grekhov, Igor' V ; Mesyats, Gennadii A
Physics-Uspekhi.  48 (2005)  7 - p. 703-712 , 2005
Link: https://doi.org/10.1070/..
 
?
8

Sub-nanosecond semiconductor opening switches based on 4H–S..:

Grekhov, Igor V. ; Ivanov, Pavel A. ; Khristyuk, Dmitry V....
Solid-State Electronics.  47 (2003)  10 - p. 1769-1774 , 2003
Link: https://doi.org/10.1016/..
 
?
9

Reverse Current Recovery in 4H-SiC Diodes with n- and p-Bas:

Ivanov, Pavel A. ; Grekhov, Igor V. ; Konstantinov, Andrey O..
Materials Science Forum.  433-436 (2003)  - p. 855-858 , 2003
Link: https://doi.org/10.4028/..
 
?
10

Interfacial Properties of Silicon Structures Fabricatedby V..:

S. Argunova, Tatyana ; V. Grekhov, Igor ; S. Kostina, Lyudmila...
Japanese Journal of Applied Physics.  37 (1998)  12R - p. 6287 , 1998
Link: https://doi.org/10.1143/..
 
?
11

Transverse-discharge copper vapor laser utilizing an optica..:

Buzhinskiĭ, O I ; Grekhov, Igor' V ; Levinshteĭn, M E..
Soviet Journal of Quantum Electronics.  13 (1983)  1 - p. 115-117 , 1983
Link: https://doi.org/10.1070/..
 
?
12

Multichannel semiconductor nanosecond switch for excitation..:

Aleksandrov, V M ; Buzhinskiĭ, O I ; Grekhov, Igor' V...
Soviet Journal of Quantum Electronics.  11 (1981)  1 - p. 111-113 , 1981
Link: https://doi.org/10.1070/..
 
?
13

Sergei Nikolaevich Bagaev (on his sixtieth birthday):

Andreev, Aleksandr F ; Alferov, Zhores I ; Bunkin, F V...
Physics-Uspekhi.  44 (2001)  10 - p. 1091-1092 , 2001
Link: https://doi.org/10.1070/..
 
?
14

Veniamin Pavlovich Chebotaev (Obituary):

Aleksandrov, Evgenii B ; Andreev, Aleksandr F ; Bagayev, S N...
Physics-Uspekhi.  36 (1993)  2 - p. 100-101 , 1993
Link: https://doi.org/10.1070/..
 
?
15

Picosecond‐Range Avalanche Switching Initiated by a Steep H..:

Brylevskiy, Victor ; Podolska, Natalia ; Smirnova, Irina..
physica status solidi (b).  256 (2019)  6 - p. , 2019
Link: https://doi.org/10.1002/..
 
1-15