E-LIB Suche - Ergebnisse für: Vaille, A.M.

1

Déploiement d'un programme d'éducation thérapeutique en nut..:

Vaille, A.M. ; Arnac, S. ; Luong-Pontic, H....
Nutrition Clinique et Métabolisme. 36 (2022) 1 - p. S62 , 2022

Link: https://doi.org/10.1016/..

2

Epitaxial lateral overgrowth of GaN on Si (111):

Feltin, E. ; Beaumont, B. ; Vennéguès, P....
Journal of Applied Physics. 93 (2003) 1 - p. 182-185 , 2003

Link: https://doi.org/10.1063/..

3

In situ growth monitoring of distributed GaN–AlGaN Bragg re..:

Schenk, H. P. D. ; de Mierry, P. ; Vennéguès, P....
Applied Physics Letters. 80 (2002) 2 - p. 174-176 , 2002

Link: https://doi.org/10.1063/..

4

Microstructural analysis of III–V nitrides grown on 6H–SiC ..:

Lahreche, H ; Vaille, M ; Vennéguès, P...
Diamond and Related Materials. 9 (2000) 3-6 - p. 452-455 , 2000

Link: https://doi.org/10.1016/..

5

Buffer free direct growth of GaN on 6H–SiC by metalorganic ..:

Lahrèche, H. ; Leroux, M. ; Laügt, M....
Journal of Applied Physics. 87 (2000) 1 - p. 577-583 , 2000

Link: https://doi.org/10.1063/..

6

Reduction mechanisms for defect densities in GaN using one-..:

Vennéguès, P. ; Beaumont, B. ; Bousquet, V...
Journal of Applied Physics. 87 (2000) 9 - p. 4175-4181 , 2000

Link: https://doi.org/10.1063/..

7

TEM Study of the Behavior of Dislocations during ELO of GaN:

Bousquet, V. ; Vennéguès, P. ; Beaumont, B...
physica status solidi (b). 216 (1999) 1 - p. 691-695 , 1999

Link: https://doi.org/10.1002/..

8

High quality ELO-GaN layers on GaN/Al2O3 patterned substrat..:

Nataf, G. ; Beaumont, B. ; Bouillé, A....
Materials Science and Engineering: B. 59 (1999) 1-3 - p. 112-116 , 1999

Link: https://doi.org/10.1016/..

9

Comparative study of GaN layers grown on insulating AlN and..:

Lahrèche, H ; Vennéguès, P ; Vaille, M...
Semiconductor Science and Technology. 14 (1999) 11 - p. L33-L36 , 1999

Link: https://doi.org/10.1088/..

10

Lateral overgrowth of GaN on patterned GaN/sapphire substra..:

Beaumont, B ; Gibart, P ; Vaille, M...
Journal of Crystal Growth. 189-190 (1998) - p. 97-102 , 1998

Link: https://doi.org/10.1016/..

11

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 ..:

Nataf, G ; Beaumont, B ; Bouillé, A...
Journal of Crystal Growth. 192 (1998) 1-2 - p. 73-78 , 1998

Link: https://doi.org/10.1016/..

12

Influence of in situ sapphire surface preparation and carri..:

Vennéguès, P ; Beaumont, B ; Haffouz, S..
Journal of Crystal Growth. 187 (1998) 2 - p. 167-177 , 1998

Link: https://doi.org/10.1016/..

13

Study of open-core dislocations in GaN films on (0001) sapp..:

Vennéguès, P. ; Beaumont, B. ; Vaille, M..
Applied Physics Letters. 70 (1997) 18 - p. 2434-2436 , 1997

Link: https://doi.org/10.1063/..

14

Homoepitaxial layers of gallium nitride grown by metalorgan..:

Teisseyre, H ; Leszczynski, M ; Suski, T...
Semiconductor Science and Technology. 12 (1997) 2 - p. 240-243 , 1997

Link: https://doi.org/10.1088/..

15

High quality GaN grown by MOVPE:

Beaumont, B. ; Vaille, M. ; Boufaden, T...
Journal of Crystal Growth. 170 (1997) 1-4 - p. 316-320 , 1997

Link: https://doi.org/10.1016/..