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Vandooren, A.
370  Ergebnisse:
Personensuche X
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1

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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2

Ultimate Layer Stacking Technology for High Density Sequent..:

, In: 2023 International Electron Devices Meeting (IEDM),
Radu, I. ; Nguyen, B-Y. ; Chang, C-H.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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4

3D Stacked Devices and MOL Innovations for Post-Nanosheet C..:

, In: 2023 International Electron Devices Meeting (IEDM),
Horiguchi, N. ; Mertens, H. ; Chiarella, T.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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5

PPAC of sheet-based CFET configurations for 4 track design ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Schuddinck, P. ; Bufler, F. M. ; Xiang, Y.... - p. 365-366 , 2022
Link: https://doi.org/10.1109/..
 
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6

Low thermal budget PBTI and NBTI reliability solutions for ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; De Marneffe, J.-F.... - p. 30.4.1-30.4.4 , 2022
Link: https://doi.org/10.1109/..
 
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7

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
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8

Low-temperature atomic and molecular hydrogen anneals for e..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Franco, J. ; Arimura, H. ; de Marneffe, J.-F.... - p. 31.4.1-31.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Dipole-First Gate Stack as a Scalable and Thermal Budget Fl..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Arimura, H. ; Ragnarsson, L.-A. ; Oniki, Y.... - p. 13.5.1-13.5.4 , 2021
Link: https://doi.org/10.1109/..
 
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10

3D sequential low temperature top tier devices using dopant..:

, In: 2020 IEEE Symposium on VLSI Technology,
Vandooren, A. ; Wu, Z. ; Parihar, N.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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11

Analysis of current mirror circuits designed with line tunn..:

Martino, M D V ; Martino, J A ; Agopian, P G D...
Semiconductor Science and Technology.  32 (2017)  5 - p. 055015 , 2017
Link: https://doi.org/10.1088/..
 
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12

Suramin protects against osteoarthritis by increasing tissu..:

Guns, L.-A. ; Kvasnytsia, M. ; Kerckhofs, G....
Osteoarthritis and Cartilage.  25 (2017)  - p. S145-S146 , 2017
Link: https://doi.org/10.1016/..
 
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13

InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec ..:

Alian, A. ; Mols, Y. ; Bordallo, C. C. M....
Applied Physics Letters.  109 (2016)  24 - p. , 2016
Link: https://doi.org/10.1063/..
 
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14

Performance of TFET and FinFET devices applied to current m..:

Martino, M D V ; Martino, J A ; Agopian, P G D...
Semiconductor Science and Technology.  31 (2016)  5 - p. 055001 , 2016
Link: https://doi.org/10.1088/..
 
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15

Analog parameters of solid source Zn diffusion InXGa1−XAs n..:

Bordallo, C ; Martino, J A ; Agopian, P G D...
Semiconductor Science and Technology.  31 (2016)  12 - p. 124001 , 2016
Link: https://doi.org/10.1088/..
 
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