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Vellianitis, G.
39  Ergebnisse:
Personensuche X
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1

MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.8..:

Ramvall, P. ; Wang, C.H. ; Astromskas, G....
Journal of Crystal Growth.  374 (2013)  - p. 43-48 , 2013
Link: https://doi.org/10.1016/..
 
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2

High crystalline quality Ge grown by MOCVD inside narrow sh..:

Vellianitis, G. ; van Dal, M.J.H. ; Duriez, B....
Journal of Crystal Growth.  383 (2013)  - p. 9-11 , 2013
Link: https://doi.org/10.1016/..
 
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3

Growth of heterostructures on InAs for high mobility device..:

Contreras-Guerrero, R. ; Wang, S. ; Edirisooriya, M....
Journal of Crystal Growth.  378 (2013)  - p. 117-120 , 2013
Link: https://doi.org/10.1016/..
 
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4

InAs hole inversion and bandgap interface state density of ..:

Wang, C. H. ; Wang, S. W. ; Doornbos, G....
Applied Physics Letters.  103 (2013)  14 - p. , 2013
Link: https://doi.org/10.1063/..
 
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5

On the role of Coulomb scattering in hafnium-silicate gated..:

Thomas, S. M. ; Prest, M. J. ; Whall, T. E....
Journal of Applied Physics.  110 (2011)  12 - p. , 2011
Link: https://doi.org/10.1063/..
 
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6

Improved effective mobility extraction in MOSFETs:

Thomas, S.M. ; Whall, T.E. ; Parker, E.H.C....
Solid-State Electronics.  53 (2009)  12 - p. 1252-1256 , 2009
Link: https://doi.org/10.1016/..
 
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7

Gatestacks for scalable high-performance FinFETs:

, In: 2007 IEEE International Electron Devices Meeting,
Vellianitis, G. ; Petry, J. ; Pawlak, B.J.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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8

Reliability degradation of HfSiO gate dielectric layers: in..:

Vellianitis, G. ; Pétry, J. ; Hooker, J.C...
Microelectronic Engineering.  84 (2007)  9-10 - p. 1972-1975 , 2007
Link: https://doi.org/10.1016/..
 
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9

Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm..:

, In: 2006 International Electron Devices Meeting,
Singanamalla, R. ; Ravit, C. ; Vellianitis, G.... - p. None , 2006
Link: https://doi.org/10.1109/..
 
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10

Characterization of field-effect transistors with La2Hf2O7 ..:

Rittersma, Z. M. ; Hooker, J. C. ; Vellianitis, G....
Journal of Applied Physics.  99 (2006)  2 - p. , 2006
Link: https://doi.org/10.1063/..
 
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11

Charge trapping in nitrided HfSiO gate dielectric layers:

Vellianitis, G. ; Rittersma, Z. M. ; Pétry, J.
Applied Physics Letters.  89 (2006)  9 - p. , 2006
Link: https://doi.org/10.1063/..
 
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12

Electrical properties of as-grown molecular beam epitaxy hi..:

Goldenblum, A. ; Pintilie, I. ; Buda, M....
Journal of Applied Physics.  99 (2006)  6 - p. , 2006
Link: https://doi.org/10.1063/..
 
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13

Space-charge-limited current involving carrier injection in..:

Goldenblum, A. ; Pintilie, I. ; Buda, M....
Applied Physics Letters.  86 (2005)  20 - p. , 2005
Link: https://doi.org/10.1063/..
 
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14

Interface trap density in amorphous La2Hf2O7/SiO2 high-κ ga..:

Mereu, B. ; Dimoulas, A. ; Vellianitis, G....
Applied Physics A.  80 (2005)  2 - p. 253-257 , 2005
Link: https://doi.org/10.1007/..
 
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15

Intrinsic carrier effects in HfO2–Ge metal–insulator–semico..:

Dimoulas, A. ; Vellianitis, G. ; Mavrou, G...
Applied Physics Letters.  86 (2005)  22 - p. , 2005
Link: https://doi.org/10.1063/..
 
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