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Vemulapati, U.
6  Ergebnisse:
Personensuche X
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1

High-Voltage (8.5 kV) Asymmetric IGCT for MVD and HVDC Appl..:

, In: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia),
Vemulapati, U. ; Johannesson, D. ; Wikstrom, T.... - p. 1189-1194 , 2023
Link: https://doi.org/10.23919..
 
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2

Recent Progress in Silicon Devices for Ultra-High Power App..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Vobecky, J. ; Vemulapati, U. ; Wikstrom, T.... - p. 36.4.1-36.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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3

Deep p-Ring Trench Termination: An Innovative and Cost-Effe..:

Antoniou, M. ; Lophitis, N. ; Udrea, F....
IEEE Electron Device Letters.  40 (2019)  2 - p. 177-180 , 2019
Link: https://doi.org/10.1109/..
 
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4

Deep p-Ring Trench Termination: An Innovative and Cost-Effe..:

Antoniou, M ; Lophitis, N ; Udrea, F...
https://nottingham-repository.worktribe.com/output/3706507.  , 2019
Link: https://doi.org/10.1109/..
 
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5

Optimal Gate Commutated Thyristor Design for Bi-Mode Gate C..:

Lophitis, N ; Antoniou, M ; Vemulapati, U...
https://nottingham-repository.worktribe.com/output/3706495.  , 2018
Link: https://doi.org/10.1109/..
 
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6

New Bi-Mode Gate-Commutated Thyristor Design Concept for Hi..:

Lophitis, N ; Antoniou, M ; Vemulapati, U...
https://nottingham-repository.worktribe.com/output/3706466.  , 2016
Link: https://doi.org/10.1109/..
 
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