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X
Vereecke, G.
95  Ergebnisse:
Personensuche X
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1

Wetting of deep hydrophilic nanoholes by aqueous solutions:

Vereecke, G. ; Darcos, A. ; Iino, H...
Microelectronic Engineering.  239-240 (2021)  - p. 111515 , 2021
Link: https://doi.org/10.1016/..
 
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2

Impact of La–OH bonds on the retention of Co/LaSiO CBRAM:

Radhakrishnan, J. ; Belmonte, A. ; Nyns, L....
Applied Physics Letters.  117 (2020)  15 - p. , 2020
Link: https://doi.org/10.1063/..
 
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3

Co Active Electrode Enhances CBRAM Performance and Scaling ..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Belmonte, A. ; Witters, T. ; Covello, A.... - p. 35.8.1-35.8.4 , 2019
Link: https://doi.org/10.1109/..
 
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4

Role of Ambient Composition on the Formation and Shape of W..:

Tamaddon, A. H. ; Mertens, P. W. ; Vermant, J....
ECS Journal of Solid State Science and Technology.  3 (2014)  1 - p. N3081-N3086 , 2014
Link: https://doi.org/10.1149/..
 
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5

Partial Wetting of Aqueous Solutions on High Aspect Ratio N..:

Vereecke, G. ; Xu, XiuMei ; Tsai, W. K....
ECS Journal of Solid State Science and Technology.  3 (2014)  1 - p. N3095-N3100 , 2014
Link: https://doi.org/10.1149/..
 
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6

UV-induced modification of fluorocarbon for improvement of ..:

Le, Q.T. ; Simms, I. ; Yue, H....
Microelectronic Engineering.  114 (2014)  - p. 136-140 , 2014
Link: https://doi.org/10.1016/..
 
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7

An environment friendly wet strip process for 193nm lithogr..:

Vereecke, G. ; Kesters, E. ; Le, Q.T....
Microelectronic Engineering.  105 (2013)  - p. 119-123 , 2013
Link: https://doi.org/10.1016/..
 
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8

Effect of UV Irradiation on Modification and Subsequent Wet..:

Le, Q. T. ; de Marneffe, J.-F. ; Conard, T....
Journal of The Electrochemical Society.  159 (2012)  3 - p. H208-H213 , 2012
Link: https://doi.org/10.1149/..
 
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9

Towards Fully Aqueous Ozone Wet Strip of 193 nm Photoresist..:

Kesters, E. ; Le, Q. T. ; Lux, M....
Journal of The Electrochemical Society.  159 (2012)  5 - p. D287-D295 , 2012
Link: https://doi.org/10.1149/..
 
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10

Outgassing study of thin films used for poly-SiGe based vac..:

Wang, B. ; Tanaka, S. ; Guo, B....
Microelectronics Reliability.  51 (2011)  9-11 - p. 1878-1881 , 2011
Link: https://doi.org/10.1016/..
 
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11

Characterization of Modification of 193-nm Photoresist by H..:

Vereecke, G. ; Claes, M. ; Le, Q.T....
Electrochemical and Solid-State Letters.  14 (2011)  10 - p. H408 , 2011
Link: https://doi.org/10.1149/..
 
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12

Stabilization of ambient sensitive atomic layer deposited l..:

Swerts, J. ; Gielis, S. ; Vereecke, G....
Applied Physics Letters.  98 (2011)  10 - p. , 2011
Link: https://doi.org/10.1063/..
 
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13

ToF–SIMS and XPS study of ion implanted 248nm deep ultravio..:

Franquet, A. ; Tsvetanova, D. ; Conard, T....
Microelectronic Engineering.  88 (2011)  5 - p. 677-679 , 2011
Link: https://doi.org/10.1016/..
 
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14

Removal of post-etch 193nm photoresist in porous low-k diel..:

Kesters, E. ; Le, Q.T. ; Lux, M...
Microelectronic Engineering.  87 (2010)  9 - p. 1674-1679 , 2010
Link: https://doi.org/10.1016/..
 
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15

Selection of ESH solvents for the wet removal of post-etch ..:

Kesters, E. ; Claes, M. ; Le, Q.T....
Microelectronic Engineering.  86 (2009)  2 - p. 160-164 , 2009
Link: https://doi.org/10.1016/..
 
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