E-LIB Suche - Ergebnisse für: Verzellesi, Giovanni

1

Hole Virtual Gate Model Explaining Surface-Related Dynamic ..:

Zagni, Nicolò ; Verzellesi, Giovanni ; Bertacchini, Alessandro...
IEEE Electron Device Letters. 45 (2024) 5 - p. 801-804 , 2024

Link: https://doi.org/10.1109/..

2

On the Dynamic RON, Vertical Leakage and Capacitance Behavi..:

Cioni, Marcello ; Chini, Alessandro ; Zagni, Nicolò...
IEEE Electron Device Letters. 45 (2024) 8 - p. 1437-1440 , 2024

Link: https://doi.org/10.1109/..

3

Correlating Interface and Border Traps With Distinctive Fea..:

Zagni, Nicolò ; Fregolent, Manuel ; Verzellesi, Giovanni...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1561-1566 , 2024

Link: https://doi.org/10.1109/..

4

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxia..:

Zanoni, Enrico ; De Santi, Carlo ; Gao, Zhan...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1396-1407 , 2024

Link: https://doi.org/10.1109/..

5

Dynamic Behavior of Threshold Voltage and ID–VDS Kink in Al..:

Gao, Zhan ; De Santi, Carlo ; Rampazzo, Fabiana...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6256-6261 , 2023

Link: https://doi.org/10.1109/..

6

Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-..:

Zagni, Nicolò ; Gao, Veronica Zhan ; Verzellesi, Giovanni...
IEEE Transactions on Device and Materials Reliability. 23 (2023) 4 - p. 453-460 , 2023

Link: https://doi.org/10.1109/..

7

Gate-Bias Induced RON Instability in p-GaN Power HEMTs:

Chini, Alessandro ; Zagni, Nicolò ; Verzellesi, Giovanni...
IEEE Electron Device Letters. 44 (2023) 6 - p. 915-918 , 2023

Link: https://doi.org/10.1109/..

8

Unveiling the Role of Hole Barrier Traps on ON-Resistance I..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),

Zagni, Nicolo ; Chini, Alessandro ; Verzellesi, Giovanni... - p. 1-5 , 2023

Link: https://doi.org/10.1109/..

9

Symmetrical VTH/RON Drifts Due to Negative/Positive Gate St..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),

Zagni, Nicolo ; Cioni, Marcello ; Castagna, Maria Eloisa... - p. 31-34 , 2022

Link: https://doi.org/10.1109/..

10

Modeling the electrical characteristic of InGaN/GaN blue-vi..:

Roccato, Nicola ; Piva, Francesco ; De Santi, Carlo...
Microelectronics Reliability. 138 (2022) - p. 114724 , 2022

Link: https://doi.org/10.1016/..

11

Failure Physics and Reliability of GaN‐Based HEMTs for Micr..:

Zanoni, Enrico ; Rampazzo, Fabiana ; De Santi, Carlo...
physica status solidi (a). 219 (2022) 24 - p. , 2022

Link: https://doi.org/10.1002/..

12

Temperature-Independent Current Dispersion in 0.15 μm AlGaN..:

Zagni, Nicolò ; Verzellesi, Giovanni ; Chini, Alessandro
Micromachines. 13 (2022) 12 - p. 2244 , 2022

Link: https://doi.org/10.3390/..

13

Editorial for the Special Issue on Wide Bandgap Based Devic..:

Verzellesi, Giovanni
Micromachines. 13 (2022) 3 - p. 403 , 2022

Link: https://doi.org/10.3390/..

14

On the Modeling of the Donor/Acceptor Compensation Ratio in..:

Zagni, Nicolò ; Chini, Alessandro ; Puglisi, Francesco Maria..
Micromachines. 12 (2021) 6 - p. 709 , 2021

Link: https://doi.org/10.3390/..

15

Fabrication of a Hydrogenated Amorphous Silicon Detector in..:

Menichelli, Mauro ; Bizzarri, Marco ; Boscardin, Maurizio...
Instruments. 5 (2021) 4 - p. 32 , 2021

Link: https://doi.org/10.3390/..