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X
Viey, A.G.
6  Ergebnisse:
Personensuche X
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1

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Volta..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Vandendaele, W. ; Leurquin, C. ; Lavieville, R.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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2

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Le Royer, C. ; Mohamad, B. ; Biscarrat, J.... - p. 49-52 , 2022
Link: https://doi.org/10.1109/..
 
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3

Role of free holes in nBTI degradation in GaN-on-Si MOS-cha..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Vandendaele, W. ; Jaud, M.-A. ; Viey, A. G.... - p. 345-348 , 2022
Link: https://doi.org/10.1109/..
 
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4

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-..:

Jaud, M. -A. ; Vandendaele, W. ; Rrustemi, B....
IEEE Transactions on Electron Devices.  69 (2022)  2 - p. 669-674 , 2022
Link: https://doi.org/10.1109/..
 
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5

In depth TCAD analysis of threshold voltage on GaN-on-Si MO..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jaud, M. -A. ; Vandendaele, W. ; Rrustemi, B.... - p. 319-322 , 2021
Link: https://doi.org/10.23919..
 
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6

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Viey, A.G. ; Vandendaele, W. ; Jaud, M.-A.... - p. 4.3.1-4.3.4 , 2019
Link: https://doi.org/10.1109/..
 
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