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Vinet, M.
~ 1100  Ergebnisse:
Personensuche X
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1

Transport characterization of CMOS-based devices fabricated..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Elbaz, G. ; Casse, M. ; Labracherie, V.... - p. 5-8 , 2023
Link: https://doi.org/10.1109/..
 
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Corrigendum to "Modeling and simulations of FDSOI five-gate..:

Catapano, E. ; Aprà, A. ; Cassé, M....
Solid-State Electronics.  199 (2023)  - p. 108540 , 2023
Link: https://doi.org/10.1016/..
 
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3

Fast High-Fidelity Single-Shot Readout of Spins in Silicon ..:

Oakes, G. A. ; Ciriano-Tejel, V. N. ; Wise, D. F....
Physical Review X.  13 (2023)  1 - p. , 2023
Link: https://doi.org/10.1103/..
 
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4

Quantum Dot-Based Frequency Multiplier:

Oakes, G.A. ; Peri, L. ; Cochrane, L....
PRX Quantum.  4 (2023)  2 - p. , 2023
Link: https://doi.org/10.1103/..
 
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5

3D sequential integration with Si CMOS stacked on 28nm indu..:

, In: 2023 International Electron Devices Meeting (IEDM),
Mota-Frutuoso, T. ; Lapras, V. ; Brunet, L.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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6

Tunnel and capacitive coupling optimization in FDSOI spin-q..:

, In: 2023 International Electron Devices Meeting (IEDM),
Bertrand, B. ; Martinez, B. ; Li, J.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

RF simulation platform of qubit control using FDSOI technol..:

Jacquinot, H. ; Maurand, R. ; Fernández-Bada, G.T....
Solid-State Electronics.  199 (2023)  - p. 108488 , 2023
Link: https://doi.org/10.1016/..
 
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8

Corrigendum to "TCAD simulations of FDSOI devices down to d..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics.  199 (2023)  - p. 108541 , 2023
Link: https://doi.org/10.1016/..
 
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9

A single hole spin with enhanced coherence in natural silic..:

Piot, N. ; Brun, B. ; Schmitt, V....
Nature Nanotechnology.  17 (2022)  10 - p. 1072-1077 , 2022
Link: https://doi.org/10.1038/..
 
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10

Experimental Demonstration of Ω-Gate SOI Nanowire MOS Trans..:

Bergamaschi, F. E. ; Ribeiro, T. A. ; Paz, B. C....
IEEE Transactions on Electron Devices.  69 (2022)  7 - p. 4022-4028 , 2022
Link: https://doi.org/10.1109/..
 
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11

Specificities of linear Si QD arrays integration and charac..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Niebojewski, H. ; Bertrand, B. ; Nowak, E.... - p. 415-416 , 2022
Link: https://doi.org/10.1109/..
 
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12

TCAD simulations of FDSOI devices down to deep cryogenic te..:

Catapano, E. ; Cassé, M. ; Gaillard, F....
Solid-State Electronics.  194 (2022)  - p. 108319 , 2022
Link: https://doi.org/10.1016/..
 
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13

FDSOI for cryoCMOS electronics: device characterization tow..:

, In: 2022 International Electron Devices Meeting (IEDM),
Casse, M. ; Paz, B. Cardoso ; Bergamaschi, F.... - p. 34.6.1-34.6.4 , 2022
Link: https://doi.org/10.1109/..
 
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14

Valley population of donor states in highly strained silico:

Voisin, B ; Ng, K S H ; Salfi, J...
Materials for Quantum Technology.  2 (2022)  2 - p. 025002 , 2022
Link: https://doi.org/10.1088/..
 
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15

Coupling control in the few-electron regime of quantum dot ..:

, In: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC),
Paz, B. Cardoso ; El-Homsy, V. ; Niegemann, D. J.... - p. 45-48 , 2022
Link: https://doi.org/10.1109/..
 
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