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Wajda, Cory
32  Ergebnisse:
Personensuche X
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1

Impact of Plasma Activation on Copper Surface Layer for Low..:

, In: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC),
Netzband, Christopher ; Burns, Dylan ; Tapily, Kandabara.. - p. 350-355 , 2023
Link: https://doi.org/10.1109/..
 
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2

Plasma-induced roughness and chemical modifications of TiN ..:

, In: 2020 IEEE International Interconnect Technology Conference (IITC),
Rogalskyj, Sophia ; Frost, Hunter ; Palka, Amber... - p. 49-51 , 2020
Link: https://doi.org/10.1109/..
 
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3

Material Innovation in the Era of Artificial Intelligence -..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Triyoso, Dina H. ; Clark, Robert D. ; Consiglio, Steven... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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4

Cyclic Plasma Treatment during ALD Hf1-XZrxO2 Deposition:

Bhuyian, Mdnasiruddin ; Misra, Durga ; Tapily, Kandabara...
ECS Transactions.  61 (2014)  2 - p. 41-53 , 2014
Link: https://doi.org/10.1149/..
 
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5

Effect of Al Doping on the Reliability of ALD HfO2:

Bhuyian, Mdnasiruddin ; Misra, Durga ; Tapily, Kandabara...
ECS Transactions.  64 (2014)  8 - p. 29-43 , 2014
Link: https://doi.org/10.1149/..
 
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6

Higher-K Formation in Atomic Layer DepositedHf1-XAlxOy:

Tapily, Kandabara ; Consiglio, Steve ; Clark, Robert...
ECS Transactions.  64 (2014)  9 - p. 123-131 , 2014
Link: https://doi.org/10.1149/..
 
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7

(Invited) Passivation Schemes for Ge High-K Metal Gate MOSF..:

Tapily, Kandabara ; Ngai, Tat ; Clark, Robert...
ECS Transactions.  61 (2014)  2 - p. 89-96 , 2014
Link: https://doi.org/10.1149/..
 
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8

Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Ann..:

Bhuyian, Mdnasiruddin ; Misra, Durga ; Tapily, Kandabara...
ECS Transactions.  58 (2013)  7 - p. 17-29 , 2013
Link: https://doi.org/10.1149/..
 
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9

Physical and Electrical Properties of MOCVD Grown HfZrO4 Hi..:

Consiglio, Steven P. ; Wajda, Cory ; Nakamura, Genji...
ECS Transactions.  28 (2010)  1 - p. 125-135 , 2010
Link: https://doi.org/10.1149/..
 
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10

Optimizing Band-Edge High-κ/Metal Gate n-MOSFETs with ALD L..:

Clark, Robert D. ; Jagannathan, Hemanth ; Consiglio, Steve...
ECS Transactions.  33 (2010)  3 - p. 75-81 , 2010
Link: https://doi.org/10.1149/..
 
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11

Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap ..:

Jagannathan, Hemanth ; Edge, Lisa F. ; Jamison, Paul...
ECS Transactions.  19 (2009)  1 - p. 253-261 , 2009
Link: https://doi.org/10.1149/..
 
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12

High-K Gate Dielectric Structures by Atomic Layer Depositio..:

Clark, Robert D. ; Consiglio, Steve ; Wajda, Cory...
ECS Transactions.  16 (2008)  4 - p. 291-305 , 2008
Link: https://doi.org/10.1149/..
 
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13

Surface Treatment and Functionalization Effects on Chemical..:

Consiglio, Steven ; Mo, Renee ; Tai, Tsong-Lin...
ECS Transactions.  6 (2007)  1 - p. 167-177 , 2007
Link: https://doi.org/10.1149/..
 
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14

Control of Material Interactions in Advanced High-k Metal G..:

Wajda, Cory ; Leusink, Gert ; Akiyama, Koji...
ECS Transactions.  3 (2006)  2 - p. 175-184 , 2006
Link: https://doi.org/10.1149/..
 
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15

Process-Induced ReRAM Performance Improvement of Atomic Lay..:

Consiglio, Steven ; Higuchi, Hisashi ; Ando, Takashi...
ECS Transactions.  102 (2021)  2 - p. 19-28 , 2021
Link: https://doi.org/10.1149/..
 
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