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Wan, Hsien-Wen
5370  Ergebnisse:
Personensuche X
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1

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/G..:

Chen, Wan-Sin ; Lin, Keng-Yung ; Lin, Yen-Hsun Glen...
ACS Applied Electronic Materials.  5 (2023)  7 - p. 3809-3816 , 2023
Link: https://doi.org/10.1021/..
 
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2

Low Dit of $(2-4)\times 10^{10}$ using Y2O3/epi-Si/Ge Gate ..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Wan, Hsien-Wen ; Cheng, Yi-Ting ; Cheng, Chao-Kai... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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3

In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge — a comparat..:

Chu, Tien-Yu ; Wan, Hsien-Wen ; Cheng, Yi-Ting...
Japanese Journal of Applied Physics.  , 2022
Link: https://doi.org/10.35848..
 
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4

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on..:

Chang, Wen Hsin ; Wan, Hsien-Wen ; Cheng, Yi-Ting...
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1024 , 2022
Link: https://doi.org/10.35848..
 
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5

High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature D..:

Wan, Hsien-Wen ; Cheng, Yi-Ting ; Cheng, Chao-Kai...
ACS Applied Electronic Materials.  4 (2022)  6 - p. 2641-2647 , 2022
Link: https://doi.org/10.1021/..
 
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6

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Kwo, Jueinai..
Nanomaterials.  12 (2022)  8 - p. 1309 , 2022
Link: https://doi.org/10.3390/..
 
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7

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, ..:

Wan, Hsien-Wen ; Hong, Yu-Jie ; Cheng, Yi-Ting...
ACS Applied Electronic Materials.  3 (2021)  5 - p. 2164-2169 , 2021
Link: https://doi.org/10.1021/..
 
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8

Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxia..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Chu, Tien-Yu...
ACS Applied Electronic Materials.  3 (2021)  10 - p. 4484-4489 , 2021
Link: https://doi.org/10.1021/..
 
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9

Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room te..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Kwo, Jueinai..
Applied Surface Science.  569 (2021)  - p. 150962 , 2021
Link: https://doi.org/10.1016/..
 
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10

Surface electronic structure of Si1−x Ge x (001)-2 × 1: a s..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Cheng, Chao-Kai...
Applied Physics Express.  13 (2020)  9 - p. 095503 , 2020
Link: https://doi.org/10.35848..
 
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11

Low-temperature grown single-crystal Si on epi Ge(001)-2 × ..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Cheng, Chao-Kai...
Applied Physics Express.  13 (2020)  8 - p. 085504 , 2020
Link: https://doi.org/10.35848..
 
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12

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite..:

Young, Lawrence Boyu ; Cheng, Chao-Kai ; Lin, Keng-Yung...
Crystal Growth & Design.  19 (2019)  4 - p. 2030-2036 , 2019
Link: https://doi.org/10.1021/..
 
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13

Microscopic Views of Atomic and Molecular Oxygen Bonding wi..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Cheng, Chiu-Ping...
Nanomaterials.  9 (2019)  4 - p. 554 , 2019
Link: https://doi.org/10.3390/..
 
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14

In situ direct determination of band offset and interfacial..:

Cheng, Chiu-Ping ; Chen, Wan-Sin ; Cheng, Yi-Ting...
Journal of Physics D: Applied Physics.  51 (2018)  40 - p. 405102 , 2018
Link: https://doi.org/10.1088/..
 
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15

Atom-to-atom interaction of O2 with epi Ge(001)-2 × 1 in el..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Cheng, Chiu-Ping...
Applied Physics Express.  11 (2018)  11 - p. 115701 , 2018
Link: https://doi.org/10.7567/..
 
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