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Waschneck, Katja
8  Ergebnisse:
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1

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Grasser, Tibor ; Feil, Maximilian W. ; Waschneck, Katja...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4218-4226 , 2024
Link: https://doi.org/10.1109/..
 
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2

Gate Switching Instability in Silicon Carbide MOSFETs—Part ..:

Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4210-4217 , 2024
Link: https://doi.org/10.1109/..
 
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3

Towards Understanding the Physics of Gate Switching Instabi..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans... - p. 1-10 , 2023
Link: https://doi.org/10.1109/..
 
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4

On the Frequency Dependence of the Gate Switching Instabili..:

Feil, Maximilian Wolfgang ; Waschneck, Katja ; Reisinger, Hans...
Materials Science Forum.  1092 (2023)  - p. 109-117 , 2023
Link: https://doi.org/10.4028/..
 
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5

Recent Developments in Understanding the Gate Switching Ins..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
Feil, Maximilian W. ; Waschneck, Katja ; Reisinger, Hans... - p. 1-9 , 2023
Link: https://doi.org/10.1109/..
 
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6

Si IGBT and SiC MOSFET – Potentials and Limitations of Plas..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Baburske, Roman ; Pfirsch, Frank ; Hansel, Jana. - p. 159-162 , 2023
Link: https://doi.org/10.1109/..
 
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7

Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circu..:

Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian...
Materials Science Forum.  1062 (2022)  - p. 688-695 , 2022
Link: https://doi.org/10.4028/..
 
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8

Modeling Bias temperature instability in Si and SiC MOSFETs..:

Waschneck, Katja Anna
https://doi.org/10.34726/hss.2020.84645.  , 2020
Link: https://doi.org/10.34726..
 
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