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Watakabe, Hajime
9  Ergebnisse:
Personensuche X
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1

8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TF..:

Tsubuku, Masashi ; Watakabe, Hajime ; Sasaki, Toshinari...
SID Symposium Digest of Technical Papers.  54 (2023)  1 - p. 78-81 , 2023
Link: https://doi.org/10.1002/..
 
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2

39‐2: Development of Advanced LTPS TFT Technology for Low P..:

Watakabe, Hajime ; Jinnai, Toshihide ; Suzumura, Isao...
SID Symposium Digest of Technical Papers.  50 (2019)  1 - p. 541-544 , 2019
Link: https://doi.org/10.1002/..
 
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3

12‐1: An Advanced LTPS TFT‐LCD using Top‐Gate Oxide TFT in ..:

Tada, Masahiro ; Mochizuki, Kazuhide ; Tsunashima, Takanori...
SID Symposium Digest of Technical Papers.  49 (2018)  1 - p. 117-120 , 2018
Link: https://doi.org/10.1002/..
 
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4

Direct formation of strained Si on insulator by laser annea..:

Tsunoda, Isao ; Matsuura, Ryo ; Tanaka, Masanori...
Thin Solid Films.  508 (2006)  1-2 - p. 96-98 , 2006
Link: https://doi.org/10.1016/..
 
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5

Pulsed Laser Annealing of Thin Silicon Films:

Sameshima, Toshiyuki ; Watakabe, Hajime ; Andoh, Nobuyuki.
Japanese Journal of Applied Physics.  45 (2006)  4R - p. 2437 , 2006
Link: https://doi.org/10.1143/..
 
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6

Electrical properties for poly-Ge films fabricated by pulse..:

Watakabe, Hajime ; Sameshima, Toshiyuki ; Kanno, Hiroshi.
Thin Solid Films.  508 (2006)  1-2 - p. 315-317 , 2006
Link: https://doi.org/10.1016/..
 
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7

Defect Reduction Treatment for Plasma–Tetraethylorthosilica..:

Watakabe, Hajime ; Sameshima, Toshiyuki ; Strutz, Thomas..
Japanese Journal of Applied Physics.  44 (2005)  12R - p. 8367 , 2005
Link: https://doi.org/10.1143/..
 
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8

Application of Plasma Jet Crystallization Technique to Fabr..:

Higashi, Seiichiro ; Kaku, Hirotaka ; Murakami, Hideki...
Japanese Journal of Applied Physics.  44 (2004)  1L - p. L108 , 2004
Link: https://doi.org/10.1143/..
 
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9

High-Pressure H2O Vapor Heat Treatment Used to Fabricate Po..:

Watakabe, Hajime ; Sameshima, Toshiyuki
Japanese Journal of Applied Physics.  41 (2002)  Part 2, No. 9A/B - p. L974-L977 , 2002
Link: https://doi.org/10.1143/..
 
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