E-LIB Suche - Ergebnisse für: Weng, You-Chen

1

Suppression of Total Dose Effects on the Performance of InA..:

Chang-Chien, Yi-En ; Chung, Chin-Han ; Yang, Chih-Yi...
IEEE Transactions on Device and Materials Reliability. , 2024

2

Low contact resistance and high breakdown voltage of AlGaN/..:

Hieu, Le Trung ; Rathaur, Shivendra K ; Lu, Chee-How...
Semiconductor Science and Technology. 39 (2024) 8 - p. 085006 , 2024

Link: https://doi.org/10.1088/..

3

The effect of the barrier thickness on DC and RF performanc..:

Wang, Chun ; Hsu, Heng-Tung ; Lin, Jui-Lung...
Semiconductor Science and Technology. 38 (2023) 7 - p. 074004 , 2023

Link: https://doi.org/10.1088/..

4

Effect of Local Substrate Removal and Backside Al Heat Diss..:

Lin, Yuan ; Huang, Hsuan-Yao ; Weng, You-Chen...
ECS Journal of Solid State Science and Technology. 12 (2023) 9 - p. 095005 , 2023

Link: https://doi.org/10.1149/..

5

High Current Density and Low Ron Quaternary InAlGaN MIS-HEM..:

Weng, You-Chen ; Chung, Chin-Han ; Ma, Cheng-Jun...
ECS Journal of Solid State Science and Technology. 12 (2023) 7 - p. 075003 , 2023

Link: https://doi.org/10.1149/..

6

Effect of TiN barrier layer in Cu-based ohmic contact of Al..:

Chang, Bei Rong ; Panda, Debashis ; Weng, You-Chen..
Semiconductor Science and Technology. 38 (2023) 8 - p. 084001 , 2023

Link: https://doi.org/10.1088/..

7

Effects on RF Performance for AlGaN/GaN HEMT on Si Substrat..:

Weng, You-Chen ; Hsu, Heng-Tung ; Tsao, Yi-Fan...
ECS Journal of Solid State Science and Technology. , 2023

Link: https://doi.org/10.1149/..

8

Effect of High-Pressure GaN Nucleation Layer on the Perform..:

Weng, You-Chen ; Hsiao, Ming-Yao ; Lin, Chun-Hsiung..
Materials. 16 (2023) 9 - p. 3376 , 2023

Link: https://doi.org/10.3390/..

9

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si..:

Lee, Ming-Wen ; Lin, Yueh-Chin ; Lai, Kuan-Hsien...
physica status solidi (a). 220 (2023) 8 - p. , 2023

Link: https://doi.org/10.1002/..

10

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–S..:

Wu, Jui-Sheng ; Weng, You-Chen ; Yang, Tsung-Ying...
physica status solidi (a). , 2023

Link: https://doi.org/10.1002/..

11

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si..:

Lee, Ming-Wen ; Lin, Yueh-Chin ; Lai, Kuan-Hsien...
physica status solidi (a). 220 (2023) 8 - p. , 2023

Link: https://doi.org/10.1002/..

12

Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulat..:

Kao, Min-Lu ; Lin, Yuan ; Weng, You-Chen..
Materials Research Express. 9 (2022) 10 - p. 105903 , 2022

Link: https://doi.org/10.1088/..

13

Hf-Based and Zr-Based Charge Trapping Layer Engineering for..:

Wu, Jui-Sheng ; Lee, Chih-Chieh ; Wu, Chia-Hsun...
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 525-531 , 2022

Link: https://doi.org/10.1109/..

14

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Bloc..:

Weng, You-Chen ; Lin, Yueh-Chin ; Hsu, Heng-Tung...
Materials. 15 (2022) 3 - p. 703 , 2022

Link: https://doi.org/10.3390/..

15

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Tra..:

Lin, Yuan ; Kao, Min-Lu ; Weng, You-Chen...
Micromachines. 13 (2022) 12 - p. 2140 , 2022

Link: https://doi.org/10.3390/..