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Witters, L.
1205  Ergebnisse:
Personensuche X
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1

Wafer-level-integrated vertical-waveguide sub-diffraction-l..:

, In: 2023 International Electron Devices Meeting (IEDM),
Kang, S. ; Benelajla, M. ; Ciamain, R. Mac... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

P21-13 Digital monitoring of beagle dogs in preclinical tox..:

Kopljar, I. ; Cools, F. ; Witters, J....
Toxicology Letters.  368 (2022)  - p. S261 , 2022
Link: https://doi.org/10.1016/..
 
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3

From 5G to 6G: will compound semiconductors make the differ..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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4

First report of Thrips setosus in Belgium:

Goedefroit, T. ; Bonte, J. ; Reybroeck, E....
EPPO Bulletin.  49 (2019)  2 - p. 386-387 , 2019
Link: https://doi.org/10.1111/..
 
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5

Understanding and Physical Modeling Superior Hot-Carrier Re..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Tyaginov, S. ; Grill, A. ; De Keersgieter, A.... - p. 21.3.1-21.3.4 , 2019
Link: https://doi.org/10.1109/..
 
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6

First demonstration of III-V HBTs on 300 mm Si substrates u..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Vais, A. ; Alcotte, R. ; Ingels, M.... - p. 9.1.1-9.1.4 , 2019
Link: https://doi.org/10.1109/..
 
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7

TEM investigations of gate-all-around nanowire devices:

Favia, P ; Richard, O ; Eneman, G...
Semiconductor Science and Technology.  34 (2019)  12 - p. 124003 , 2019
Link: https://doi.org/10.1088/..
 
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8

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passi..:

Loo, R. ; Arimura, H. ; Cott, D....
ECS Journal of Solid State Science and Technology.  7 (2018)  2 - p. P66-P72 , 2018
Link: https://doi.org/10.1149/..
 
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9

Scalability comparison between raised- and embedded-SiGe so..:

Yamaguchi, S. ; Witters, L. ; Mitard, J....
Microelectronics Reliability.  83 (2018)  - p. 157-161 , 2018
Link: https://doi.org/10.1016/..
 
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10

HarmVect - a simulation-based tool for pathway risk maps of..:

Berkvens, N. ; Jansen, F. ; Casteels, H....
EPPO Bulletin.  47 (2017)  2 - p. 237-245 , 2017
Link: https://doi.org/10.1111/..
 
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11

Use of high order precursors for manufacturing gate all aro..:

Hikavyy, A. ; Zyulkov, I. ; Mertens, H....
Materials Science in Semiconductor Processing.  70 (2017)  - p. 24-29 , 2017
Link: https://doi.org/10.1016/..
 
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12

Self-aligned double patterning process for subtractive Ge f..:

Milenin, A.P. ; Witters, L. ; Barla, K..
Thin Solid Films.  602 (2016)  - p. 64-67 , 2016
Link: https://doi.org/10.1016/..
 
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13

Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IF..:

Ritzenthaler, R. ; Schram, T. ; Witters, L....
Materials Science in Semiconductor Processing.  42 (2016)  - p. 255-258 , 2016
Link: https://doi.org/10.1016/..
 
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14

Split CV mobility at low temperature operation of Ge pFinFE..:

Oliveira, A V ; Simoen, E ; Agopian, P G D...
Semiconductor Science and Technology.  31 (2016)  11 - p. 114002 , 2016
Link: https://doi.org/10.1088/..
 
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15

Bias Temperature Instability (BTI) in high-mobility channel..:

Franco, J. ; Kaczer, B. ; Vais, A....
MRS Advances.  1 (2016)  49 - p. 3329-3340 , 2016
Link: https://doi.org/10.1557/..
 
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