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Wright, N. G.
22179  Ergebnisse:
Personensuche X
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1

Obtaining mechanical parameters for metallisation stress se..:

Soare, S. ; Bull, S. J. ; Oila, A....
International Journal of Materials Research.  96 (2022)  11 - p. 1262-1266 , 2022
Link: https://doi.org/10.1515/..
 
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2

Positive flatband voltage shift in phosphorus doped SiO2/N-..:

Idris, M I ; Weng, M H ; Peters, A...
Journal of Physics D: Applied Physics.  52 (2019)  50 - p. 505102 , 2019
Link: https://doi.org/10.1088/..
 
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3

Socialism and the experience of time: idealism and the pres..:

Wright, N. J. G - First edition . , 2017
Link: http://dx.doi.org/10.109..
 
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4

Recent advance in high manufacturing readiness level and hi..:

Weng, M H ; Clark, D T ; Wright, S N...
Semiconductor Science and Technology.  32 (2017)  5 - p. 054003 , 2017
Link: https://doi.org/10.1088/..
 
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5

Electrical stability impact of gate oxide in channel implan..:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),
Idris, M. I. ; Weng, M. H. ; Chan, H.-K.... - p. 1-1 , 2016
Link: https://doi.org/10.4028/..
 
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6

4H-SiC Schottky diode arrays for X-ray detection:

Lioliou, G. ; Chan, H.K. ; Gohil, T....
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.  840 (2016)  - p. 145-152 , 2016
Link: https://doi.org/10.1016/..
 
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7

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacit..:

Idris, M. I. ; Weng, M. H. ; Chan, H.-K....
Journal of Applied Physics.  120 (2016)  21 - p. , 2016
Link: https://doi.org/10.1063/..
 
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8

Physical complexity to model morphological changes at a nat..:

Guan, M. ; Wright, N. G. ; Sleigh, P. A...
Water Resources Research.  52 (2016)  8 - p. 6348-6364 , 2016
Link: https://doi.org/10.1002/..
 
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9

Temperature impact on switching characteristics of resistiv..:

Mahapatra, R. ; Maji, S. ; Horsfall, A.B..
Microelectronic Engineering.  138 (2015)  - p. 118-121 , 2015
Link: https://doi.org/10.1016/..
 
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10

Determination of the adhesion energy of graphene on SiC(000..:

Wells, G. H. ; Hopf, T. ; Vassilevski, K. V....
Applied Physics Letters.  105 (2014)  19 - p. , 2014
Link: https://doi.org/10.1063/..
 
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11

Unexpected change in the electron affinity of diamond cause..:

Tiwari, Amit K. ; Goss, J. P. ; Briddon, P. R....
EPL (Europhysics Letters).  108 (2014)  4 - p. 46005 , 2014
Link: https://doi.org/10.1209/..
 
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12

Dirac point and transconductance of top-gated graphene fiel..:

Hopf, T. ; Vassilevski, K. V. ; Escobedo-Cousin, E....
Journal of Applied Physics.  116 (2014)  15 - p. , 2014
Link: https://doi.org/10.1063/..
 
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13

Detection of polar chemical vapors using epitaxial graphene..:

Nagareddy, V. K. ; Chan, H. K. ; Hernández, S. C....
Applied Physics Letters.  102 (2013)  17 - p. , 2013
Link: https://doi.org/10.1063/..
 
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14

Complementary JFET Logic for Low-Power Applications in Extr..:

Habib, H. ; Wright, N.G. ; Horsfall, A.B.
Materials Science Forum.  740-742 (2013)  - p. 1052-1055 , 2013
Link: https://doi.org/10.4028/..
 
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15

A robust 2D shallow water model for solving flow over compl..:

Guan, M. ; Wright, N.G. ; Sleigh, P.A.
International Journal for Numerical Methods in Fluids.  73 (2013)  3 - p. 225-249 , 2013
Link: https://doi.org/10.1002/..
 
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