E-LIB Suche - Ergebnisse für: Wurfl, Joachim

1

Investigation of atomic layer deposition methods of Al2O3 o..:

Tadmor, Liad ; Vandenbroucke, Sofie S. T. ; Bahat Treidel, Eldad...
Journal of Applied Physics. 135 (2024) 8 - p. , 2024

Link: https://doi.org/10.1063/..

2

Importance of Scaling in RF GaN HEMTs for Reduction of Surf..:

Yazdani, Hossein ; Zervos, Christos ; Beleniotis, Petros...
physica status solidi (a). , 2024

Link: https://doi.org/10.1002/..

3

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an ave..:

Tetzner, Kornelius ; Klupsch, Michael ; Popp, Andreas...
Japanese Journal of Applied Physics. 62 (2023) SF - p. SF1010 , 2023

Link: https://doi.org/10.35848..

4

Highly Robust GaN Power Amplifier at Millimeter-Wave Freque..:

Tsao, Yi-Fan ; Chiu, Ping-Hsun ; Chevtchenko, Serguei...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6244-6249 , 2023

Link: https://doi.org/10.1109/..

5

10 A/950 V switching of GaN-channel HFETs with non-doped Al..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Hilt, Oliver ; Brunner, Frank ; Wolf, Mihaela... - p. 374-377 , 2023

Link: https://doi.org/10.1109/..

6

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

7

Demonstration of a Millimeter-wave High-Power Transceiver M..:

, In: 2023 Asia-Pacific Microwave Conference (APMC),

Tsao, Yi-Fan ; Wang, Yuan ; Chiu, Ping-Hsun... - p. 61-63 , 2023

Link: https://doi.org/10.1109/..

8

Gate leakage modeling in lateralβ-Ga2O3 MOSFETs with Al2O3 ..:

Fregolent, Manuel ; Brusaterra, Enrico ; De Santi, Carlo...
Applied Physics Letters. 123 (2023) 10 - p. , 2023

Link: https://doi.org/10.1063/..

9

GaN-Based Multichip Half-Bridge Power Module Integrated on ..:

Kuring, Carsten ; Wolf, Mihaela ; Geng, Xiaomeng...
IEEE Transactions on Power Electronics. 37 (2022) 10 - p. 11896-11910 , 2022

Link: https://doi.org/10.1109/..

10

Effects of post metallization annealing on Al2O3 atomic lay..:

Tadmor, Liad ; Brusaterra, Enrico ; Treidel, Eldad Bahat...
Semiconductor Science and Technology. 38 (2022) 1 - p. 015006 , 2022

Link: https://doi.org/10.1088/..

11

SnO/β-Ga2O3 heterojunction field-effect transistors and ver..:

Tetzner, Kornelius ; Egbo, Kingsley ; Klupsch, Michael...
Applied Physics Letters. 120 (2022) 11 - p. , 2022

Link: https://doi.org/10.1063/..

12

Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transi..:

Yazdani, Hossein ; Chevtchenko, Serguei ; Brunner, Frank..
physica status solidi (a). 219 (2022) 8 - p. , 2022

Link: https://doi.org/10.1002/..

13

Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Ra..:

Tsao, Yi-Fan ; Hsu, Heng-Shou ; Wurfl, Joachim.
IEEE Access. 10 (2022) - p. 77826-77836 , 2022

Link: https://doi.org/10.1109/..

14

Modeling of Hot-Via Technology for System-in-Package at Mil..:

, In: 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT),

Tsao, Yi-Fan ; Wang, Yuan ; Chevtchenko, Serguei... - p. 88-89 , 2022

Link: https://doi.org/10.1109/..

15

Logarithmic trapping and detrapping inβ-Ga2O3 MOSFETs: Expe..:

Fregolent, Manuel ; Brusaterra, Enrico ; De Santi, Carlo...
Applied Physics Letters. 120 (2022) 16 - p. , 2022

Link: https://doi.org/10.1063/..