E-LIB Suche - Ergebnisse für: Xie, Jinqiao

1

Direct observation of radio-frequency negative differential..:

Zhu, Zhongtao ; Cao, Lina ; Jönsson, Adam...
Applied Physics Letters. 124 (2024) 17 - p. , 2024

Link: https://doi.org/10.1063/..

2

Origin of leakage current in vertical GaN devices with nonp..:

Xiao, Ming ; Yan, Xiaodong ; Xie, Jinqiao...
Applied Physics Letters. 117 (2020) 18 - p. , 2020

Link: https://doi.org/10.1063/..

3

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN ..:

Xiao, Ming ; Du, Zhonghao ; Xie, Jinqiao...
Applied Physics Letters. 116 (2020) 5 - p. , 2020

Link: https://doi.org/10.1063/..

4

Connection between Carbon Incorporation and Growth Rate for..:

Ciarkowski, Timothy ; Allen, Noah ; Carlson, Eric...
Materials. 12 (2019) 15 - p. 2455 , 2019

Link: https://doi.org/10.3390/..

5

Realization of GaN PolarMOS using selective-area regrowth b..:

Li, Wenshen ; Nomoto, Kazuki ; Sundar, Aditya...
Japanese Journal of Applied Physics. 58 (2019) SC - p. SCCD15 , 2019

Link: https://doi.org/10.7567/..

6

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated wit..:

Wang, Jingshan ; McCarthy, Robert ; Youtsey, Chris...
physica status solidi (a). 216 (2019) 4 - p. , 2019

Link: https://doi.org/10.1002/..

7

Activation of buried p-GaN in MOCVD-regrown vertical struct..:

Li, Wenshen ; Nomoto, Kazuki ; Lee, Kevin...
Applied Physics Letters. 113 (2018) 6 - p. , 2018

Link: https://doi.org/10.1063/..

8

High voltage, high current GaN-on-GaN p-n diodes with parti..:

Wang, Jingshan ; Cao, Lina ; Xie, Jinqiao...
Applied Physics Letters. 113 (2018) 2 - p. , 2018

Link: https://doi.org/10.1063/..

9

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated wit..:

Wang, Jingshan ; McCarthy, Robert ; Youtsey, Chris...
physica status solidi (a). 216 (2018) 4 - p. , 2018

Link: https://doi.org/10.1002/..

10

Thin-film GaN Schottky diodes formed by epitaxial lift-off:

Wang, Jingshan ; Youtsey, Chris ; McCarthy, Robert...
Applied Physics Letters. 110 (2017) 17 - p. , 2017

Link: https://doi.org/10.1063/..

11

High internal quantum efficiency in AlGaN multiple quantum ..:

Bryan, Zachary ; Bryan, Isaac ; Xie, Jinqiao...
Applied Physics Letters. 106 (2015) 14 - p. , 2015

Link: https://doi.org/10.1063/..

12

The role of the carbon-silicon complex in eliminating deep ..:

Gaddy, Benjamin E. ; Bryan, Zachary ; Bryan, Isaac...
Applied Physics Letters. 104 (2014) 20 - p. , 2014

Link: https://doi.org/10.1063/..

13

Stimulated emission and optical gain in AlGaN heterostructu..:

Guo, Wei ; Bryan, Zachary ; Xie, Jinqiao...
Journal of Applied Physics. 115 (2014) 10 - p. , 2014

Link: https://doi.org/10.1063/..

14

Polarity control and growth of lateral polarity structures ..:

Kirste, Ronny ; Mita, Seiji ; Hussey, Lindsay...
Applied Physics Letters. 102 (2013) 18 - p. , 2013

Link: https://doi.org/10.1063/..

15

Lasing and longitudinal cavity modes in photo-pumped deep u..:

Xie, Jinqiao ; Mita, Seiji ; Bryan, Zachary...
Applied Physics Letters. 102 (2013) 17 - p. , 2013

Link: https://doi.org/10.1063/..