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Xu, Ying-Qiang
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1

High-temperature continuous-wave operation of 1310 nm InAs/..:

Su, Xiang-Bin ; Shao, Fu-Hui ; Hao, Hui-Ming...
Chinese Physics B.  32 (2023)  9 - p. 098103 , 2023
Link: https://doi.org/10.1088/..
 
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2

On the origin of carrier localization in AlInAsSb digital a..:

Zhou, Wen-Guang ; Jiang, Dong-Wei ; Shang, Xiang-Jun...
Chinese Physics B.  32 (2023)  8 - p. 088501 , 2023
Link: https://doi.org/10.1088/..
 
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3

Wet etching and passivation of GaSb-based very long wavelen..:

Xu, Xue-Yue ; Jiang, Jun-Kai ; Chen, Wei-Qiang...
Chinese Physics B.  31 (2022)  6 - p. 068503 , 2022
Link: https://doi.org/10.1088/..
 
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4

Dark current simulation and analysis for InAs/GaSb long wav..:

Cui, Su-Ning ; Chen, Wei-Qiang ; Jiang, Dong-Wei...
Infrared Physics & Technology.  121 (2022)  - p. 104006 , 2022
Link: https://doi.org/10.1016/..
 
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5

Growth of high material quality InAs/GaSb type-II superlatt..:

Lin, Fang-Qi ; Li, Nong ; Zhou, Wen-Guang...
Chinese Physics B.  31 (2022)  9 - p. 098504 , 2022
Link: https://doi.org/10.1088/..
 
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6

GaSb-based type-I quantum well cascade diode lasers emittin..:

Zhang, Yi ; Yang, Cheng-Ao ; Shang, Jin-Ming...
Chinese Physics B.  30 (2021)  9 - p. 094204 , 2021
Link: https://doi.org/10.1088/..
 
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7

Growth of high quality InSb thin films on GaAs substrates b..:

Li, Yong ; Li, Xiao-Ming ; Hao, Rui-Ting...
Chinese Physics B.  30 (2021)  2 - p. 028504 , 2021
Link: https://doi.org/10.1088/..
 
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8

MBE growth of mid-wavelength infrared photodetectors based ..:

Jiang, Jun-Kai ; Li, Yong ; Chang, Fa-Ran...
Journal of Crystal Growth.  564 (2021)  - p. 126109 , 2021
Link: https://doi.org/10.1016/..
 
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9

Investigation of active-region doping on InAs/GaSb long wav..:

Cui, Su-Ning ; Jiang, Dong-Wei ; Sun, Ju...
Chinese Physics B.  29 (2020)  4 - p. 048502 , 2020
Link: https://doi.org/10.1088/..
 
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10

High-performance midwavelength infrared detectors based on ..:

Zhang, Xuan ; Jia, Qing-Xuan ; Sun, Ju...
Chinese Physics B.  29 (2020)  6 - p. 068501 , 2020
Link: https://doi.org/10.1088/..
 
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11

High-power, high-spectral-purity GaSb-based laterally coupl..:

Yang, Cheng-Ao ; Xie, Sheng-Wen ; Zhang, Yi...
Applied Physics Letters.  114 (2019)  2 - p. , 2019
Link: https://doi.org/10.1063/..
 
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12

Growth and characterization of type-II superlattice photodi..:

Qi, Tong-Tong ; Guo, Jie ; Hao, Rui-Ting...
Optical and Quantum Electronics.  51 (2019)  9 - p. , 2019
Link: https://doi.org/10.1007/..
 
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13

High material quality growth of AlInAsSb thin films on GaSb..:

Chang, Fa-Ran ; Hao, Rui-Ting ; Qi, Tong-Tong...
Chinese Physics B.  28 (2019)  2 - p. 028503 , 2019
Link: https://doi.org/10.1088/..
 
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14

High performance GaSb based digital-grown InGaSb/AlGaAsSb m..:

Xie, Sheng-Wen ; Zhang, Yu ; Yang, Cheng-Ao...
Chinese Physics B.  28 (2019)  1 - p. 014208 , 2019
Link: https://doi.org/10.1088/..
 
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15

High quantum efficiency long-/long-wave dual-color type-II ..:

Jiang, Zhi ; Sun, Yao-Yao ; Guo, Chun-Yan...
Chinese Physics B.  28 (2019)  3 - p. 038504 , 2019
Link: https://doi.org/10.1088/..
 
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