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Yang, Jeong Yong
29327  Ergebnisse:
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1

Heterogeneous integration of high-k complex-oxide gate diel..:

Ji, Jongho ; Yang, Jeong Yong ; Lee, Sangho...
Communications Engineering.  3 (2024)  1 - p. , 2024
Link: https://doi.org/10.1038/..
 
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2

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stresse..:

Jeong, Yeong Je ; Lee, Chan Ho ; Yeom, Min Jae..
physica status solidi (a).  220 (2023)  5 - p. , 2023
Link: https://doi.org/10.1002/..
 
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3

Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mob..:

Kang, Ha Young ; Yeom, Min Jae ; Yang, Jeong Yong...
Materials Today Physics.  31 (2023)  - p. 101002 , 2023
Link: https://doi.org/10.1016/..
 
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4

Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Ena..:

Yang, Jeong Yong ; Park, Minseong ; Yeom, Min Jae...
ACS Nano.  , 2023
Link: https://doi.org/10.1021/..
 
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5

Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric ..:

Yang, Jeong Yong ; Oh, Seung Yoon ; Yeom, Min Jae...
IEEE Electron Device Letters.  44 (2023)  8 - p. 1260-1263 , 2023
Link: https://doi.org/10.1109/..
 
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6

Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown vol..:

Jeong, Yeong Je ; Park, Ji-Hyeon ; Yeom, Min Jae...
Applied Physics Express.  15 (2022)  7 - p. 074001 , 2022
Link: https://doi.org/10.35848..
 
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7

Reconfigurable Radio‐Frequency High‐Electron Mobility Trans..:

Yang, Jeong Yong ; Yeom, Min Jae ; Lee, Jaeyong...
Advanced Electronic Materials.  8 (2022)  9 - p. , 2022
Link: https://doi.org/10.1002/..
 
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8

A comparative study of charge trapping effect in p-type MoT..:

Yang, Jeong Yong ; Lee, Chan Ho ; Oh, Young Taek...
Japanese Journal of Applied Physics.  60 (2021)  1 - p. 011003 , 2021
Link: https://doi.org/10.35848..
 
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9

Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge..:

Lee, Chan Ho ; Yang, Jeong Yong ; Heo, Junseok.
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 295-299 , 2021
Link: https://doi.org/10.1109/..
 
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10

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Anneal..:

Yeom, Min Jae ; Yang, Jeong Yong ; Lee, Chan Ho...
Micromachines.  12 (2021)  12 - p. 1441 , 2021
Link: https://doi.org/10.3390/..
 
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11

Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O..:

Jeong, Yeong Je ; Yang, Jeong Yong ; Lee, Chan Ho...
Applied Surface Science.  558 (2021)  - p. 149936 , 2021
Link: https://doi.org/10.1016/..
 
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12

Ferroelectric α‐In2Se3Wrapped‐Gate β‐Ga2O3Field‐Effect Tran..:

Yang, Jeong Yong ; Yeom, Min Jae ; Park, Youngseo..
Advanced Electronic Materials.  7 (2021)  8 - p. 2100306 , 2021
Link: https://doi.org/10.1002/..
 
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13

Active-matrix monolithic gas sensor array based on MoS2 thi..:

Kim, Sehwan ; Park, Heekyeong ; Choo, Sooho...
Communications Materials.  1 (2020)  1 - p. , 2020
Link: https://doi.org/10.1038/..
 
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Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical ..:

Park, Tae Ho ; Yang, Jeong Yong ; Ma, Jiyeon.
Journal of the Korean Physical Society.  77 (2020)  4 - p. 317-322 , 2020
Link: https://doi.org/10.3938/..
 
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15

Heterogeneous integration of high-k complex-oxide gate diel..:

Ji, Jongho ; Yang, Jeong Yong ; Lee, Sangho...
10.1038/s44172-024-00161-z.  , 2024
Link: https://hdl.handle.net/1..
 
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