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Yano, Ei
46  Ergebnisse:
Personensuche X
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1

A Resolution Enhancement Material for 193-nm Lithography Co..:

Nozaki, Koji ; Igarashi, Miwa ; Yano, Ei...
Journal of Photopolymer Science and Technology.  24 (2011)  6 - p. 657-665 , 2011
Link: https://doi.org/10.2494/..
 
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2

Imaging results for resist films exposed to EUV radiation:

Ryoo, Manhyoung ; Shirayone, Shigeru ; Yano, Ei..
Microelectronic Engineering.  61-62 (2002)  - p. 723-728 , 2002
Link: https://doi.org/10.1016/..
 
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3

Evaluation of the Outgassing from Resists at the EUV Wavele..:

Irie, Shigeo ; Oizumi, Hiroaki ; Nishiyama, Iwao...
Journal of Photopolymer Science and Technology.  14 (2001)  4 - p. 561-565 , 2001
Link: https://doi.org/10.2494/..
 
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4

Development of Resist Materials for EUVL:

Irie, Shigeo ; Shirayone, Shigeru ; Mori, Shigeyasu...
Journal of Photopolymer Science and Technology.  13 (2000)  3 - p. 385-389 , 2000
Link: https://doi.org/10.2494/..
 
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5

High etch-resistant EB resists employing adamantyl protecti..:

Nozaki, Koji ; Kon, Jun-ichi ; Yano, Ei
Journal of Photopolymer Science and Technology.  13 (2000)  3 - p. 397-403 , 2000
Link: https://doi.org/10.2494/..
 
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6

Theoretical estimation of absorption coefficients of variou..:

Matsuzawa, Nobuyuki N. ; Oizumi, Hiroaki ; Mori, Shigeyasu...
Microelectronic Engineering.  53 (2000)  1-4 - p. 671-674 , 2000
Link: https://doi.org/10.1016/..
 
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7

Prediction of resolution using wet-develop type single laye..:

Mori, Shigeyasu ; Shirayone, Shigeru ; Irie, Shigeo...
Microelectronic Engineering.  53 (2000)  1-4 - p. 689-692 , 2000
Link: https://doi.org/10.1016/..
 
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8

Theoretical Calculation of Photoabsorption of Various Polym..:

Matsuzawa, Nobuyuki N. ; Oizumi, Hiroaki ; Mori, Shigeyasu...
Japanese Journal of Applied Physics.  38 (1999)  12S - p. 7109 , 1999
Link: https://doi.org/10.1143/..
 
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9

Theoretical Estimation of Absorption Coefficients of Variou..:

Matsuzawa, Nobuyuki N. ; Oizumi, Hiroaki ; Mori, Shigeyasu...
Journal of Photopolymer Science and Technology.  12 (1999)  4 - p. 571-576 , 1999
Link: https://doi.org/10.2494/..
 
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10

Evaluation of Alicyclic Methacrylate Resist with a .GAMMA.-..:

Nozaki, Koji ; Yano, Ei
Journal of Photopolymer Science and Technology.  11 (1998)  3 - p. 493-498 , 1998
Link: https://doi.org/10.2494/..
 
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11

New Protective Groups in Alicyclic Methacrylate Polymers fo..:

Nozaki, Koji ; Yano, Ei
Journal of Photopolymer Science and Technology.  10 (1997)  4 - p. 545-550 , 1997
Link: https://doi.org/10.2494/..
 
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12

Post-Exposure-Bake Simulation Model with Constant Acid Loss..:

Yanagishita, Yuichiro ; Miyata, Shuichi ; Kaimoto, Yuko...
Japanese Journal of Applied Physics.  36 (1997)  12S - p. 7611 , 1997
Link: https://doi.org/10.1143/..
 
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13

Impact of 2-Methyl-2-Adamantyl Group Used for 193-nm Single..:

Takechi, Satoshi ; Takahashi, Makoto ; Kotachi, Akiko...
Journal of Photopolymer Science and Technology.  9 (1996)  3 - p. 475-488 , 1996
Link: https://doi.org/10.2494/..
 
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14

A New Single-Layer Resist for 193-nm Lithography:

Nozaki, Koji ; Watanabe, Keiji ; Namiki, Takahisa...
Japanese Journal of Applied Physics.  35 (1996)  4B - p. L528 , 1996
Link: https://doi.org/10.1143/..
 
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15

A Novel Polymer for a 193-nm Resist:

NOZAKI, KOJI ; WATANABE, KEIJI ; YANO, EI...
Journal of Photopolymer Science and Technology.  9 (1996)  3 - p. 509-522 , 1996
Link: https://doi.org/10.2494/..
 
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