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X
Yaremenko, N. G.
126  Ergebnisse:
Personensuche X
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1

Automation of an Apparatus for Registration of Photolumines..:

Filatov, A. L. ; Byshevsky-Konopko, O. A. ; Yaremenko, N. G...
Instruments and Experimental Techniques.  65 (2022)  1 - p. 80-82 , 2022
Link: https://doi.org/10.1134/..
 
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2

Influence of Holes Capture Efficiency on Photoluminescence ..:

Yaremenko, N. G. ; Strakhov, V. A. ; Karachevtseva, M. V.
Semiconductors.  53 (2019)  15 - p. 1975-1978 , 2019
Link: https://doi.org/10.1134/..
 
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3

Oscillatory Rate of Excess Carrier Capture into Quantum Wel..:

Yaremenko, N. G. ; Strakhov, V. A. ; Karachevtseva, M. V.
Journal of Communications Technology and Electronics.  63 (2018)  10 - p. 1230-1234 , 2018
Link: https://doi.org/10.1134/..
 
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4

Dynamics of the Accumulation of Excess Holes in n-AlGaAs/Ga..:

Yaremenko, N. G. ; Strakhov, V. A. ; Karachevtseva, M. V..
Russian Microelectronics.  46 (2017)  7 - p. 449-453 , 2017
Link: https://doi.org/10.1134/..
 
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5

Measurement of the concentration of 2D electrons in δ-doped..:

Yaremenko, N. G. ; Galiev, G. B. ; Vasil'evskii, I. S....
Journal of Communications Technology and Electronics.  58 (2013)  3 - p. 243-249 , 2013
Link: https://doi.org/10.1134/..
 
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6

Photoluminescence study of single-side doped n-AlGaAs/GaAs ..:

Yaremenko, N. G. ; Karachevtseva, M. V. ; Strakhov, V. A.
Russian Microelectronics.  41 (2012)  7 - p. 357-364 , 2012
Link: https://doi.org/10.1134/..
 
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7

Resonance capture of holes in modulation-doped n-AlGaAs/GaA..:

Yaremenko, N. G. ; Karachevtseva, M. V. ; Strakhov, V. A.
Doklady Physics.  56 (2011)  3 - p. 150-154 , 2011
Link: https://doi.org/10.1134/..
 
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8

Nonstoichiometric defects in silicon-doped GaAs epilayers g..:

Yaremenko, N. G. ; Galiev, G. B. ; Karachevtseva, M. V...
Doklady Physics.  53 (2008)  4 - p. 187-191 , 2008
Link: https://doi.org/10.1134/..
 
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9

Photoluminescence of Si-doped GaAs epitaxial layers:

Yaremenko, N. G. ; Karachevtseva, M. V. ; Strakhov, V. A...
Semiconductors.  42 (2008)  13 - p. 1480-1486 , 2008
Link: https://doi.org/10.1134/..
 
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10

Exciton-exciton interaction in GaAs/AlGaAs quantum wells un..:

Yaremenko, N. G. ; Galiev, G. B. ; Karachevtseva, M. V...
Doklady Physics.  51 (2006)  8 - p. 403-407 , 2006
Link: https://doi.org/10.1134/..
 
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11

Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantu..:

Galiev, G. B. ; Karachevtseva, M. V. ; Mokerov, V. G....
Semiconductors.  37 (2003)  5 - p. 581-585 , 2003
Link: https://doi.org/10.1134/..
 
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12

Band-edge photoluminescence of heavily doped InxGa1−x As1−y..:

Karachevtseva, M. V. ; Strakhov, V. A. ; Yaremenko, N. G.
Semiconductors.  33 (1999)  8 - p. 830-835 , 1999
Link: https://doi.org/10.1134/..
 
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13

Optical properties of silicon-doped (100) GaAs layers grown..:

Mokerov, V. G. ; Fedorov, Yu. V. ; Guk, A. V....
Semiconductors.  32 (1998)  9 - p. 950-952 , 1998
Link: https://doi.org/10.1134/..
 
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14

Synthesis, study of the structure, and modification of the ..:

Kolos, Nadezhda N. ; Nazarenko, Nikolai V. ; Shishkina, Svetlana V....
Chemistry of Heterocyclic Compounds.  56 (2020)  9 - p. 1202-1209 , 2020
Link: https://doi.org/10.1007/..
 
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15

One-pot diastereoselective synthesis of functionalized 4,5-..:

Kolos, Nadezhda N. ; Karpan, Sergey A. ; Omelchenko, Irina V...
Chemistry of Heterocyclic Compounds.  55 (2019)  9 - p. 827-833 , 2019
Link: https://doi.org/10.1007/..
 
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