Yokogawa, Toshiya
55  Ergebnisse:
Personensuche X
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3

A High Power InGaN‐LED on an m‐Plane GaN Substrate:

YOKOGAWA, TOSHIYA ; OYA, MITSUAKI ; FUJIKANE, MASAKI
Electronics and Communications in Japan.  98 (2015)  5 - p. 15-22 , 2015
 
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4

Theoretical considerations on efficiency degradation due to..:

Sato-Iwanaga, Junko ; Liu, Yang ; Dutton, Robert W...
Japanese Journal of Applied Physics.  53 (2014)  10 - p. 102101 , 2014
 
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5

Microarea Strain Analysis in InGaN/GaN Multiple Quantum Wel..:

Yoshida, Shunji ; Yokogawa, Toshiya ; Imai, Yasuhiko.
Japanese Journal of Applied Physics.  52 (2013)  7R - p. 071001 , 2013
 
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6

Low Contact Resistance P-Type Electrode for Nonpolar m-Plan..:

Oya, Mitsuaki ; Yokogawa, Toshiya
Japanese Journal of Applied Physics.  52 (2013)  3R - p. 032101 , 2013
 
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7

Strain Rate Controlled Nanoindentation Examination and Inci..:

Fujikane, Masaki ; Yokogawa, Toshiya ; Nagao, Shijo.
Japanese Journal of Applied Physics.  52 (2013)  8S - p. 08JJ01 , 2013
 
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11

Ultraviolet biexcitonic emission from AlGaN ternary alloys:

Yokogawa, Toshiya ; Yamada, Yoichi
Electronics and Communications in Japan.  94 (2011)  6 - p. 41-47 , 2011
 
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