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Yonai, Tsubasa
7  Ergebnisse:
Personensuche X
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1

A highly reliable 1.8 V 1 Mb Hf0.5Zr0.5O2-based 1T1C FeRAM ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Okuno, Jun ; Kunihiro, Takafumi ; Yonai, Tsubasa... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1..:

Okuno, Jun ; Yonai, Tsubasa ; Kunihiro, Takafumi...
IEEE Journal of the Electron Devices Society.  11 (2023)  - p. 43-46 , 2023
Link: https://doi.org/10.1109/..
 
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3

Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Okuno, Jun ; Yonai, Tsubasa ; Kunihiro, Takafumi... - p. 64-66 , 2022
Link: https://doi.org/10.1109/..
 
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4

85% endurance error reduction and data-retention lifetime e..:

Kinoshita, Hiroshi ; Yonai, Tsubasa ; Takeuchi, Ken
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGB14 , 2020
Link: https://doi.org/10.35848..
 
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5

98% Endurance Error Reduction by Hard_Verify for 40nm TaOx ..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Yonai, Tsubasa ; Kinoshita, Hiroshi ; Yasuhara, Ryutaro. - p. 35-36 , 2020
Link: https://doi.org/10.1109/..
 
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6

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1..:

Okuno, Jun ; Yonai, Tsubasa ; Kunihiro, Takafumi...
IEEE journal of the Electron Devices Society : J-EDS.  , 2023
Link: https://publica.fraunhof..
 
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7

Investigation of Recovery Phenomena in Hf 0.5 Zr 0.5 O 2 -B..:

Jun Okuno ; Tsubasa Yonai ; Takafumi Kunihiro...
https://ieeexplore.ieee.org/document/9993736/.  , 2023
Link: https://doi.org/10.1109/..
 
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