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X
Zangenberg, N.
24  Ergebnisse:
Personensuche X
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1

High temperature superconductors (HTS) in accelerator syste..:

, In: High Temperature Superconductors (HTS) for Energy Applications,
Zangenberg, N. - p. 369-392 , 2012
Link: https://doi.org/10.1533/..
 
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2

Bandedge absorption of GaAsN films measured by the photothe..:

Beaudoin, M. ; Chan, I.C.W. ; Beaton, D....
Journal of Crystal Growth.  311 (2009)  7 - p. 1662-1665 , 2009
Link: https://doi.org/10.1016/..
 
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3

Publisher's Note: Donor level of bond-center hydrogen in ge..:

Dobaczewski, L. ; Bonde Nielsen, K. ; Zangenberg, N....
Physical Review B.  70 (2004)  7 - p. , 2004
Link: https://doi.org/10.1103/..
 
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4

Donor level of bond-center hydrogen in germanium:

Dobaczewski, L. ; Nielsen, K. Bonde ; Zangenberg, N....
Physical Review B.  69 (2004)  24 - p. , 2004
Link: https://doi.org/10.1103/..
 
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5

Radiation Enhanced Silicon Self-Diffusion and the Silicon V..:

Bracht, H. ; Pedersen, J. Fage ; Zangenberg, N....
Physical Review Letters.  91 (2003)  24 - p. , 2003
Link: https://doi.org/10.1103/..
 
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6

High temperature superconductors (HTS) in accelerator syste..:

, In: High temperature superconductors (HTS) for energy applications,
Zangenberg, N. - p. 369-392 ,
Link: https://doi.org/10.1533/..
 
?
7

High temperature superconductors (HTS) in accelerator syste..:

, In: High temperature superconductors (HTS) for energy applications,
Zangenberg, N. - p. 369-392 ,
Link: https://doi.org/10.1533/..
 
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8

The influence of oxide/nitride surface layers on diffusion ..:

Zangenberg, N.R. ; Chevallier, J. ; Hansen, J.L..
Applied Physics A.  81 (2005)  5 - p. 1077-1082 , 2005
Link: https://doi.org/10.1007/..
 
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9

On-line DLTS investigations of vacancy related defects in l..:

Zangenberg, N.R. ; Nylandsted Larsen, A.
Applied Physics A.  80 (2005)  5 - p. 1081-1086 , 2005
Link: https://doi.org/10.1007/..
 
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10

Boron and phosphorus diffusion in strained and relaxed Si a..:

Zangenberg, N. R. ; Fage-Pedersen, J. ; Hansen, J. Lundsgaard.
Journal of Applied Physics.  94 (2003)  6 - p. 3883-3890 , 2003
Link: https://doi.org/10.1063/..
 
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11

The Meyer–Neldel rule for diffusion in Si and SiGe:

Zangenberg, N.R. ; Nylandsted Larsen, A.
Physica B: Condensed Matter.  340-342 (2003)  - p. 780-783 , 2003
Link: https://doi.org/10.1016/..
 
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12

Ge Self-Diffusion in EpitaxialSi1−xGexLayers:

Zangenberg, N. R. ; Lundsgaard Hansen, J. ; Fage-Pedersen, J..
Physical Review Letters.  87 (2001)  12 - p. , 2001
Link: https://doi.org/10.1103/..
 
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13

Boron Diffusion in Strained and Relaxed Si1-xGex:

Zangenberg, N.R. ; Fage-Pedersen, J. ; Lundsgaard Hansen, J..
Defect and Diffusion Forum.  194-199 (2001)  - p. 703-708 , 2001
Link: https://doi.org/10.4028/..
 
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14

Materials characterisation and software tools as key enable..:

Konstantopoulos, G ; Charitidis, CA ; Banares, MA...
info:eu-repo/semantics/altIdentifier/wos/WOS:001041596600001.  , 2023
Link: https://hdl.handle.net/1..
 
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15

The EuCARD-2 Future Magnets European Collaboration for Acce..:

Rossi, L ; Badel, A ; Bajko, M...
info:eu-repo/semantics/altIdentifier/wos/000366167000001.  , 2016
Link: https://publikationen.bi..
 
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