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X
Zemlyakov, E. V.
193  Ergebnisse:
Personensuche X
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1

Development of Direct Laser Deposition Technology for Large..:

Korolev, V. A. ; Sidorov, A. V. ; Mikhailov, I. Yu....
Inorganic Materials: Applied Research.  14 (2023)  5-6 - p. 1451-1457 , 2023
Link: https://doi.org/10.1134/..
 
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2

A Study of Residual Stresses in Steel Plates Obtained by La..:

Karpov, I. D. ; Em, V. T. ; Rylov, S. A....
Physics of Metals and Metallography.  124 (2023)  5 - p. 529-535 , 2023
Link: https://doi.org/10.1134/..
 
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3

Analysis of the Effect of Spacer Layers on Nonlinear Distor..:

Tarasova, E. A. ; Khazanova, S. V. ; Golikov, O. L....
Semiconductors.  55 (2021)  12 - p. 895-898 , 2021
Link: https://doi.org/10.1134/..
 
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4

GaN power IC normally-on and normally-off transistors techn..:

Egorkin, V I ; Bespalov, V A ; Kukhtyaeva, O B...
Journal of Physics: Conference Series.  2086 (2021)  1 - p. 012058 , 2021
Link: https://doi.org/10.1088/..
 
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5

Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostr..:

Egorkin, V. I. ; Bespalov, V. A. ; Zaitsev, A. A....
Semiconductors.  55 (2021)  13 - p. 1039-1044 , 2021
Link: https://doi.org/10.1134/..
 
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6

Investigation of the Effect of Atomic Composition on the Pl..:

Garmash, V. I. ; Zemlyakov, V. E. ; Egorkin, V. I...
Semiconductors.  54 (2020)  8 - p. 895-899 , 2020
Link: https://doi.org/10.1134/..
 
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7

Neutron Diffraction Research of Residual Stress in Metal Pl..:

Karpov, I. D. ; Rylov, S. A. ; Em, V. T....
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.  14 (2020)  S1 - p. S79-S81 , 2020
Link: https://doi.org/10.1134/..
 
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8

Simulation of a Normally-off HEMT Transistor Based on a GaN..:

Egorkin, V. I. ; Zemlyakov, V. E. ; Kapaev, V. V..
Russian Microelectronics.  49 (2020)  6 - p. 445-451 , 2020
Link: https://doi.org/10.1134/..
 
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9

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High..:

Malin, T. V. ; Milakhin, D. S. ; Aleksandrov, I. A....
Technical Physics Letters.  45 (2019)  8 - p. 761-764 , 2019
Link: https://doi.org/10.1134/..
 
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10

Developing of normally-off p-GaN gate HEMT:

Kukhtyaeva, O B ; Egorkin, V I ; Zemlyakov, V E...
Journal of Physics: Conference Series.  1410 (2019)  1 - p. 012192 , 2019
Link: https://doi.org/10.1088/..
 
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11

Influence of the Metallization Composition and Annealing Pr..:

Egorkin, V. I. ; Zemlyakov, V. E. ; Nezhentsev, A. V...
Semiconductors.  53 (2019)  15 - p. 2012-2015 , 2019
Link: https://doi.org/10.1134/..
 
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12

Effect of crystal orientation on the implant profile and re..:

Egorkin, V I ; Nezhentsev, A V ; Zemlyakov, V E..
Journal of Physics: Conference Series.  1410 (2019)  1 - p. 012219 , 2019
Link: https://doi.org/10.1088/..
 
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13

The effects of beam oscillation on the quality of laser dep..:

Vildanov, A M ; Babkin, K D ; Zemlyakov, E V.
Journal of Physics: Conference Series.  1109 (2018)  - p. 012059 , 2018
Link: https://doi.org/10.1088/..
 
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14

Investigation of Alloyed Ohmic Contacts in Epitaxial Tellur..:

Egorkin, V. I. ; Zemlyakov, V. E. ; Nezhentsev, A. V....
Russian Microelectronics.  47 (2018)  6 - p. 388-392 , 2018
Link: https://doi.org/10.1134/..
 
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15

Investigating the RTA Treatment of Ohmic Contacts to n-Laye..:

Egorkin, V. I. ; Zemlyakov, V. E. ; Nezhentsev, A. V..
Semiconductors.  52 (2018)  15 - p. 1969-1972 , 2018
Link: https://doi.org/10.1134/..
 
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