Zhang, Aohang
11  Ergebnisse:
Personensuche X
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1

16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side I..:

Yu, Qisheng ; Huang, Jiaweiwen ; Shen, Zhigang..
IEEE Electron Device Letters.  45 (2024)  6 - p. 1064-1067 , 2024
 
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4

Reverse Recovery Enhanced and Single-Event Effects Hardened..:

Yu, Qisheng ; Chen, Wensuo ; Zhang, Aohang.
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 2888-2893 , 2024
 
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8

Novel Vertical Fin-Based NiO/β-Ga2O3 Heterojunction Field-E..:

Huang, Jiaweiwen ; Chen, Wensuo ; Yu, Qisheng...
ECS Journal of Solid State Science and Technology.  12 (2023)  9 - p. 095002 , 2023
 
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9

Single-event effect hardening of the Schottky contact super..:

Zhang, Aohang ; Chen, Wensuo ; Huang, Jiaweiwen...
Journal of Computational Electronics.  22 (2023)  5 - p. 1463-1471 , 2023
 
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10

A snapback-free and fast-switching planar-gate SOI LIGBT wi..:

Wang, Yuying ; Zhang, Aohang ; Jian, Peng.
IEICE Electronics Express.  19 (2022)  16 - p. 20220288-20220288 , 2022
 
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11

Drug repositioning based on tripartite cross-network embedd..:

Zeng, Pan ; Zhang, Bofei ; Liu, Aohang...
Expert Systems with Applications.  252 (2024)  - p. 124152 , 2024
 
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