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Zhao, Sheng-Lei
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1

Design and simulation of AlN-based vertical Schottky barrie..:

Su, Chun-Xu ; Wen, Wei ; Fei, Wu-Xiong...
Chinese Physics B.  30 (2021)  6 - p. 067305 , 2021
Link: https://doi.org/10.1088/..
 
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2

Investigation on threshold voltage of p-channel GaN MOSFETs..:

Li, Ruo-Han ; Fei, Wu-Xiong ; Tang, Rui...
Chinese Physics B.  30 (2021)  8 - p. 087305 , 2021
Link: https://doi.org/10.1088/..
 
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3

Breakdown voltage enhancement in GaN channel and AlGaN chan..:

Wang, Zhong-Xu ; Du, Lin ; Liu, Jun-Wei...
Chinese Physics B.  29 (2020)  2 - p. 027301 , 2020
Link: https://doi.org/10.1088/..
 
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4

1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high..:

Zhao, Sheng-Lei ; Wang, Zhi-Zhe ; Chen, Da-Zheng...
Chinese Physics B.  28 (2019)  2 - p. 027301 , 2019
Link: https://doi.org/10.1088/..
 
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5

Effect of gate length on breakdown voltage in AlGaN/GaN hig..:

Luo, Jun ; Zhao, Sheng-Lei ; Mi, Min-Han...
Chinese Physics B.  25 (2016)  2 - p. 027303 , 2016
Link: https://doi.org/10.1088/..
 
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6

Enhancement of Breakdown Voltage in AlGaN/GaN High Electron..:

Luo, Jun ; Zhao, Sheng-Lei ; Lin, Zhi-Yu...
Chinese Physics Letters.  33 (2016)  6 - p. 067301 , 2016
Link: https://doi.org/10.1088/..
 
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7

Using in-process measurements of open-gate structures to ev..:

Hou, Bin ; Ma, Xiao-Hua ; Chen, Wei-Wei...
Applied Physics Letters.  107 (2015)  16 - p. , 2015
Link: https://doi.org/10.1063/..
 
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8

Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High..:

Li, Xiang-Dong ; Zhang, Jin-Cheng ; Guo, Zhen-Xing...
Chinese Physics Letters.  32 (2015)  11 - p. 117202 , 2015
Link: https://doi.org/10.1088/..
 
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9

Improvement of the off-state breakdown voltage with field p..:

Zhang, Peng ; Zhao, Sheng-Lei ; Hou, Bin...
Chinese Physics B.  24 (2015)  3 - p. 037304 , 2015
Link: https://doi.org/10.1088/..
 
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10

Investigation of trap states in Al2O3InAlN/GaN metal–oxide–..:

Zhang, Peng ; Zhao, Sheng-Lei ; Xue, Jun-Shuai...
Chinese Physics B.  24 (2015)  12 - p. 127306 , 2015
Link: https://doi.org/10.1088/..
 
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11

Improved performance of AlGaN/GaN HEMT by N2O plasma pre-tr..:

Mi, Min-Han ; Zhang, Kai ; Zhao, Sheng-Lei...
Chinese Physics B.  24 (2015)  2 - p. 027303 , 2015
Link: https://doi.org/10.1088/..
 
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12

Trap states induced by reactive ion etching in AlGaN/GaN hi..:

Luo, Jun ; Zhao, Sheng-Lei ; Mi, Min-Han...
Chinese Physics B.  24 (2015)  11 - p. 117305 , 2015
Link: https://doi.org/10.1088/..
 
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13

Mechanism of improving forward and reverse blocking voltage..:

Zhao, Sheng-Lei ; Mi, Min-Han ; Hou, Bin...
Chinese Physics B.  23 (2014)  10 - p. 107303 , 2014
Link: https://doi.org/10.1088/..
 
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14

Trap States in Al2O3InAlN/GaN Metal-Oxide-Semiconductor Str..:

Zhang, Peng ; Zhao, Sheng-Lei ; Xue, Jun-Shuai...
Chinese Physics Letters.  31 (2014)  3 - p. 037302 , 2014
Link: https://doi.org/10.1088/..
 
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15

Reverse blocking enhancement of drain field plate in Schott..:

Zhao, Sheng-Lei ; Wang, Yuan ; Yang, Xiao-Lei...
Chinese Physics B.  23 (2014)  9 - p. 097305 , 2014
Link: https://doi.org/10.1088/..
 
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