Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Zhilyaev, Yu. V.
193  Ergebnisse:
Personensuche X
?
1

Physica status solidi 

Volume 89, Number 1: May 16  Physica status solidi ; Volume 89, Number 1, A
Abass, A. K ; Abramov, V. N ; Abrikosov, N. Kh... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
?
2

Local thermoelectric effects in wide-gap semiconductors:

Ordin, S. V. ; Zhilyaev, Yu. V. ; Zelenin, V. V..
Semiconductors.  51 (2017)  7 - p. 883-886 , 2017
Link: https://doi.org/10.1134/..
 
?
3

Absorption spectra of bulk aluminum nitride crystals doped ..:

Zhilyaev, Yu. V. ; Zelenin, V. V. ; Mokhov, E. N....
Technical Physics Letters.  42 (2016)  2 - p. 156-159 , 2016
Link: https://doi.org/10.1134/..
 
?
4

The effect of surfactants on epitaxial growth of gallium ni..:

Zhilyaev, Yu. V. ; Zelenin, V. V. ; Orlova, T. A....
Technical Physics Letters.  41 (2015)  5 - p. 476-478 , 2015
Link: https://doi.org/10.1134/..
 
?
5

Formation mechanism of contact resistance to III–N heterost..:

Sachenko, A. V. ; Belyaev, A. E. ; Boltovets, N. S....
Semiconductors.  47 (2013)  9 - p. 1180-1184 , 2013
Link: https://doi.org/10.1134/..
 
?
6

Photoreflectance characterization of gallium arsenide:

Komkov, O. S. ; Pikhtin, A. N. ; Zhilyaev, Yu. V.
Russian Microelectronics.  41 (2012)  8 - p. 508-510 , 2012
Link: https://doi.org/10.1134/..
 
?
7

Epitaxy of gallium nitride in semi-polar direction on silic..:

Bessolov, V. N. ; Zhilyaev, Yu. V. ; Konenkova, E. V....
Technical Physics Letters.  38 (2012)  1 - p. 9-11 , 2012
Link: https://doi.org/10.1134/..
 
?
8

GaAs p-i-n structures for X-ray detectors grown on Ge and G..:

Zhilyaev, Yu. V. ; Mikulik, D. I. ; Nasonov, A. V....
Technical Physics Letters.  38 (2012)  5 - p. 399-401 , 2012
Link: https://doi.org/10.1134/..
 
?
9

Aluminum nitride on silicon: Role of silicon carbide interl..:

Bessolov, V. N. ; Zhilyaev, Yu. V. ; Konenkova, E. V....
Technical Physics Letters.  36 (2010)  6 - p. 496-499 , 2010
Link: https://doi.org/10.1134/..
 
?
10

Chloride vapor-phase epitaxy of gallium nitride at a reduce..:

Zhilyaev, Yu. V. ; Rodin, S. N.
Technical Physics Letters.  36 (2010)  5 - p. 397-399 , 2010
Link: https://doi.org/10.1134/..
 
?
11

Generating broadband random Gaussian signals:

Zhilyaev, Yu. V. ; Il'inskaya, N. D. ; Inovenkov, A. N....
Technical Physics Letters.  36 (2010)  8 - p. 733-736 , 2010
Link: https://doi.org/10.1134/..
 
?
12

High-temperature gallium phosphide dynistors:

Zhilyaev, Yu. V. ; Panyutin, E. A. ; Fedorov, L. M.
Technical Physics Letters.  35 (2009)  9 - p. 808-811 , 2009
Link: https://doi.org/10.1134/..
 
?
13

Determination of the free carrier concentration in ultra-pu..:

Komkov, O. S. ; Pikhtin, A. N. ; Zhilyaev, Yu. V..
Technical Physics Letters.  34 (2008)  1 - p. 37-39 , 2008
Link: https://doi.org/10.1134/..
 
?
14

Binary acceptor doping of epitaxial gallium phosphide for h..:

Zhilyaev, Yu. V. ; Panyutin, E. A. ; Fedorov, L. M.
Technical Physics Letters.  34 (2008)  10 - p. 898-900 , 2008
Link: https://doi.org/10.1134/..
 
?
15

Chloride vapor-phase epitaxy of gallium nitride on silicon:..:

Aksyanov, I. G. ; Bessolov, V. N. ; Zhilyaev, Yu. V....
Technical Physics Letters.  34 (2008)  6 - p. 479-482 , 2008
Link: https://doi.org/10.1134/..
 
1-15