E-LIB Suche - Ergebnisse für: Zhou, Jiaan

1

Annealing Process on Metal–Oxide–Semiconductor Channel Prop..:

Zhou, Jiaan ; Yang, An ; Yu, Guohao...
physica status solidi (RRL) – Rapid Research Letters. , 2024

Link: https://doi.org/10.1002/..

2

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semicond..:

Guo, Bohan ; Yu, Guohao ; Zhang, Li...
Crystals. 14 (2024) 3 - p. 253 , 2024

Link: https://doi.org/10.3390/..

3

Polarization Properties in AlGaN/GaN HEMT-Array with a Shif..:

Xing, Runxian ; Zhang, Ping ; Guo, Hongyang...
Plasmonics. , 2024

Link: https://doi.org/10.1007/..

4

Improved Gate Stability of Metal–Insulator–Semiconductor-Hi..:

Li, Yu ; Zhou, Jiaan ; Xing, Runxian...
ACS Applied Electronic Materials. , 2024

Link: https://doi.org/10.1021/..

5

Current-collapse suppression and leakage-current decrease i..:

Liu, Bosen ; Yu, Guohao ; Jia, Huimin...
Journal of Semiconductors. 45 (2024) 7 - p. 072501 , 2024

Link: https://doi.org/10.1088/..

6

Comparative Analysis of the GaN Nonpolar Plane Morphology b..:

Zhou, Jiaan ; Tang, Wenxin ; Ju, Tao...
ACS Applied Materials & Interfaces. 15 (2023) 21 - p. 26159-26165 , 2023

Link: https://doi.org/10.1021/..

7

Comparing Electrical Performance of Lateral GaN Schottky Ba..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Zhou, Jiaan ; Yu, Guohao ; Hao, Chunfeng. - p. 215-217 , 2023

Link: https://doi.org/10.1109/..

8

Study of enhancement-mode GaN pFET with H plasma treated ga..:

Gao, Xiaotian ; Yu, Guohao ; Zhou, Jiaan...
Journal of Semiconductors. 44 (2023) 11 - p. 112801 , 2023

Link: https://doi.org/10.1088/..

9

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN..:

Yang, An ; Wei, Xing ; Shen, Wenchao...
Crystals. 13 (2023) 4 - p. 620 , 2023

Link: https://doi.org/10.3390/..

10

Effective suppression of interface states in recessed-gate ..:

Li, Yu ; Yu, Guohao ; Wang, Heng...
Applied Physics Express. 17 (2023) 1 - p. 011004 , 2023

Link: https://doi.org/10.35848..

11

Polarization Properties in GaN Double-Channel HEMTs at Mid-..:

Xing, Runxian ; Guo, Hongyang ; Yu, Guohao...
Plasmonics. 19 (2023) 3 - p. 1121-1130 , 2023

Link: https://doi.org/10.1007/..

12

Effects of the stepped sidewall morphology on the ON-state ..:

Tang, Wenxin ; Zhou, Jiaan ; Yu, Guohao...
Applied Physics Express. 15 (2022) 7 - p. 076502 , 2022

Link: https://doi.org/10.35848..

13

Implementation of Recessed Gate Normally off GaN Metal–Insu..:

Liu, Weining ; Yu, Guohao ; Zhou, Jiaan...
ACS Applied Electronic Materials. 4 (2022) 3 - p. 897-902 , 2022

Link: https://doi.org/10.1021/..

14

Robust control and training risk reduction for boiler level..:

Kang, Jia-Lin ; Mirzaei, Somayeh ; Zhou, Jia-An
Journal of the Taiwan Institute of Chemical Engineers. 130 (2022) - p. 103956 , 2022

Link: https://doi.org/10.1016/..

15

Preparation of highly (111) textured nanotwinned copper by ..:

Zhan, Xiaofei ; Lian, Jian ; Li, Hongjun...
Electrochimica Acta. 365 (2021) - p. 137391 , 2021

Link: https://doi.org/10.1016/..