E-LIB Suche - Ergebnisse für: de Mendonça, A.C.

1

Light scattering and atomic force microscopy study of InAs ..:

Rasnik, I. ; Brasil, M. J. S. P. ; Cerdeira, F...
Journal of Applied Physics. 87 (2000) 3 - p. 1165-1171 , 2000

2

Characterization of InP grown by LEC using glassy carbon, s..:

de Oliveira, C.E.M. ; de Carvalho, M.M.G. ; Mendonça, C.A.C....
Journal of Crystal Growth. 186 (1998) 4 - p. 487-493 , 1998

Link: https://doi.org/10.1016/..

3

On the optical properties of InAs/InP systems: The role of ..:

Mendonça, C. A. C. ; Laureto, E. ; Brasil, M. J. S. P....
Applied Physics Letters. 72 (1998) 9 - p. 1015-1017 , 1998

Link: https://doi.org/10.1063/..

4

Current status and prospects of the photovoltaic rural elec..:

Diniz, A. S. A. C. ; Mendonça, M. S. C. C. ; Almeida, F. Q...
Progress in Photovoltaics: Research and Applications. 6 (1998) 5 - p. 365-377 , 1998

Link: https://doi.org/10.1002/..

5

Equilibrium shape and nucleation on InP(001) surfaces: effe..:

Soares, L.S.M ; Cotta, M.A ; Mendonça, C.A.C..
Journal of Crystal Growth. 191 (1998) 1-2 - p. 44-50 , 1998

Link: https://doi.org/10.1016/..

6

On the onset of InAs islanding on InP: influence of surface..:

Cotta, M.A. ; Mendonça, C.A.C. ; Meneses, E.A..
Surface Science. 388 (1997) 1-3 - p. 84-91 , 1997

Link: https://doi.org/10.1016/..

7

Widely tunable femtosecond neodymium fiber laser:

Ober, M. H. ; Sucha, G. D. ; Mendonca, C. A. C....
Optics Letters. 20 (1995) 22 - p. 2303 , 1995

Link: https://doi.org/10.1364/..

8

Effects of cation diffusion during chemical beam etching:

Chiu, T.H. ; Tsang, W.T. ; Williams, M.D....
Journal of Crystal Growth. 150 (1995) - p. 546-550 , 1995

Link: https://doi.org/10.1016/..

9

High-power neodymium soliton fiber laser that uses a chirpe..:

Hofer, M. ; Fermann, M. E. ; Sugden, K....
Optics Letters. 20 (1995) 16 - p. 1701 , 1995

Link: https://doi.org/10.1364/..

10

Surface cleaning of GaAs by in situ chemical beam etching:

Chiu, T. H. ; Tsang, W. T. ; Williams, M. D....
Applied Physics Letters. 65 (1994) 26 - p. 3368-3370 , 1994

Link: https://doi.org/10.1063/..

11

Electronic properties of multiple Si δ-doped GaAs layers gr..:

Shibili, S.M. ; Henriques, A.B. ; Mendonça, C.A.C....
Journal of Crystal Growth. 127 (1993) 1-4 - p. 700-702 , 1993

Link: https://doi.org/10.1016/..

12

Electronic properties of Si δ-doped GaAs quantum wells:

Mendonça, C.A.C. ; Scolfaro, L.M.R. ; Oliveira, J.B.B....
Superlattices and Microstructures. 12 (1992) 2 - p. 257-260 , 1992

Link: https://doi.org/10.1016/..

13

Hole confinement effects on multiple Si δ doping in GaAs:

Shibli, S. M. ; Scolfaro, L. M. R. ; Leite, J. R....
Applied Physics Letters. 60 (1992) 23 - p. 2895-2896 , 1992

Link: https://doi.org/10.1063/..

14

Lattice Constant of AlAs:

Leszczynski, M. ; Micovic, M. ; Mendonca, C. A. C...
Crystal Research and Technology. 27 (1992) 1 - p. 97-100 , 1992

Link: https://doi.org/10.1002/..

15

Effect of temperature on the built-in electric field in het..:

Martins, J.M.V. ; Scolfaro, L.M.R. ; Mendonça, C.A.C...
Superlattices and Microstructures. 10 (1991) 2 - p. 239-242 , 1991

Link: https://doi.org/10.1016/..