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Emtsev, V. V.
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1

Relaxation of mechanical stresses in bending of silicon waf..:

Emtsev, V.V. ; Toporov, V.V. ; Oganesyan, G.A...
Physica B: Condensed Matter.  684 (2024)  - p. 415949 , 2024
Link: https://doi.org/10.1016/..
 
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2

Physica status solidi 

Volume 90, Number 2: August 16  Physica status solidi ; Volume 90, Number 2, A
A. De Saja, J ; Abdullaev, E. G ; Afanasev, A. M... - Reprint 2021 . , [2022]
Link: https://doi.org/10.1515/..
 
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3

Vacancy-Phosphorus Complexes in Electron-Irradiated Floatin..:

Emtsev, V. V. ; Abrosimov, N. V. ; Kozlovski, V. V...
Semiconductors.  54 (2020)  1 - p. 46-54 , 2020
Link: https://doi.org/10.1134/..
 
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4

Towards the Modeling of Impurity-Related Defects in Irradia..:

Emtsev, V. V. ; Oganesyan, G. A.
Semiconductors.  54 (2020)  11 - p. 1388-1394 , 2020
Link: https://doi.org/10.1134/..
 
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5

Dependence of the Kinetics of Radiation-Induced Defect Form..:

Kozlovski, V. V. ; Vasil'ev, A. E. ; Emtsev, V. V...
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.  13 (2019)  6 - p. 1155-1159 , 2019
Link: https://doi.org/10.1134/..
 
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6

Interaction Rates of Group-III and Group-V Impurities with ..:

Emtsev, V. V. ; Abrosimov, N. V. ; Kozlovski, V. V...
Semiconductors.  52 (2018)  13 - p. 1677-1685 , 2018
Link: https://doi.org/10.1134/..
 
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7

Diversity of Properties of Device Structures Based on Group..:

Emtsev, V. V. ; Gushchina, E. V. ; Petrov, V. N....
Semiconductors.  52 (2018)  7 - p. 942-949 , 2018
Link: https://doi.org/10.1134/..
 
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8

Radiation-produced defects in germanium: Experimental data ..:

Emtsev, V. V. ; Kozlovski, V. V. ; Poloskin, D. S..
Semiconductors.  51 (2017)  12 - p. 1571-1587 , 2017
Link: https://doi.org/10.1134/..
 
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9

Effect of irradiation with 15-MeV protons on the compensati..:

Kozlovski, V. V. ; Vasil'ev, A. E. ; Emtsev, V. V...
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.  11 (2017)  3 - p. 601-605 , 2017
Link: https://doi.org/10.1134/..
 
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10

Specific features of proton interaction with transistor str..:

Emtsev, V. V. ; Zavarin, E. E. ; Kozlovskii, M. A....
Technical Physics Letters.  42 (2016)  11 - p. 1079-1082 , 2016
Link: https://doi.org/10.1134/..
 
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11

The relationship between the reliability of transistors wit..:

Emtsev, V. V. ; Zavarin, E. E. ; Oganesyan, G. A....
Technical Physics Letters.  42 (2016)  7 - p. 701-703 , 2016
Link: https://doi.org/10.1134/..
 
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12

Effect of the energy of recoil atoms on conductivity compen..:

Kozlovski, V.V. ; Lebedev, A.A. ; Emtsev, V.V..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  384 (2016)  - p. 100-105 , 2016
Link: https://doi.org/10.1016/..
 
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13

Some challenging points in the identification of defects in..:

Emtsev, V. V. ; Abrosimov, N. V. ; Kozlovskii, V. V...
Semiconductors.  50 (2016)  10 - p. 1291-1298 , 2016
Link: https://doi.org/10.1134/..
 
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14

Monovacancy–As complexes in proton-irradiated Ge studied by..:

Elsayed, M. ; Yu. Arutyunov, N. ; Krause-Rehberg, R....
Acta Materialia.  83 (2015)  - p. 473-478 , 2015
Link: https://doi.org/10.1016/..
 
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15

Nonlinear effects in semiconductor-conductivity compensatio..:

Kozlovski, V. V. ; Vasil'ev, A. E. ; Emtsev, V. V..
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.  8 (2014)  5 - p. 950-952 , 2014
Link: https://doi.org/10.1134/..
 
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