E-LIB Suche - Ergebnisse für: Füssel, W.

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Physica status solidi

Volume 51, Number 2: February 16 Physica status solidi ; Volume 51, Number 2, A

Akutsu, J ; Albrecht, G ; Alekseevskii, N. E... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 98, Number 2: December 16 Physica status solidi ; Volume 98, Number 2, A

Afanasev, A. M ; Ahmad, M ; Alexandrova, S... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Anodic passivation of SiGe:

Rappich, J ; Füssel, W
Microelectronics Reliability. 40 (2000) 4-5 - p. 825-827 , 2000

Link: https://doi.org/10.1016/..

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Photoluminescence characterization of non-radiative defect ..:

Timoshenko, V.Yu. ; Petrenko, A.B. ; Dittrich, Th...
Thin Solid Films. 364 (2000) 1-2 - p. 196-199 , 2000

Link: https://doi.org/10.1016/..

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Capture cross sections of defect states at the Si/SiO2 inte..:

Albohn, J. ; Füssel, W. ; Sinh, N. D...
Journal of Applied Physics. 88 (2000) 2 - p. 842-849 , 2000

Link: https://doi.org/10.1063/..

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Two types of traps at the interface characterized by their ..:

Albohn, J. ; Füssel, W. ; Ngo Duong Sinh...
Microelectronic Engineering. 48 (1999) 1-4 - p. 159-162 , 1999

Link: https://doi.org/10.1016/..

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Voltage and current loss in semiconductor solar cells from ..:

Sinh, Ngo Duong ; Spieβ, F. ; Kliefoth, K..
Solar Energy Materials and Solar Cells. 48 (1997) 1-4 - p. 43-52 , 1997

Link: https://doi.org/10.1016/..

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Density of states and relaxation spectra of etched, H-termi..:

Flietner, H. ; Füssel, W. ; Sinh, N.D..
Applied Surface Science. 104-105 (1996) - p. 342-348 , 1996

Link: https://doi.org/10.1016/..

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Defects at the Si/SiO2 interface: Their nature and behaviou..:

Füssel, W. ; Schmidt, M. ; Angermann, H...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 377 (1996) 2-3 - p. 177-183 , 1996

Link: https://doi.org/10.1016/..

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Heterojunctions in photovoltaic applications:

Elstner, L. ; Conrad, E. ; Eschrich, H...
physica status solidi (b). 194 (1996) 1 - p. 79-90 , 1996

Link: https://doi.org/10.1002/..

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Defect generation at silicon surfaces during etching and in..:

Angermann, H. ; Kliefoth, K. ; Füssel, W..
Microelectronic Engineering. 28 (1995) 1-4 - p. 51-54 , 1995

Link: https://doi.org/10.1016/..

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Structural, optical and electrical properties of SIPOS pass..:

Füssel, W. ; Henrion, W. ; Scholz, R.
Microelectronic Engineering. 22 (1993) 1-4 - p. 355-358 , 1993

Link: https://doi.org/10.1016/..

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Radiation induced degradation of Si/SiO2 structures and the..:

Füssel, W. ; Schmidt, M. ; Flietner, H.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 65 (1992) 1-4 - p. 238-242 , 1992

Link: https://doi.org/10.1016/..

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Specific memory effect in MOS structures:

Litovchenko, V. G. ; Lisovskii, I. P. ; Litvinov, R. O...
Physica Status Solidi (a). 51 (1979) 2 - p. K161-K164 , 1979

Link: https://doi.org/10.1002/..

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Interface states of the Si/SiO2 system and their separation..:

Flietner, H. ; Füssel, W. ; Sinh, N. D.
Physica Status Solidi (a). 43 (1977) 1 - p. K99-K101 , 1977

Link: https://doi.org/10.1002/..