Hayashi, Shin-ichiro
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2

Reliability under High Gate-Voltage Condition on SiC MOSFET..:

, In: 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia),
 
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3

High-Performance Driving of SiC MOSFETs to Implement Short-..:

, In: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia),
Hayashi, Shin-Ichiro ; Wada, Keiji - p. 1485-1490 , 2023
 
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5

Gate Drive Circuit with In situ Condition Monitoring System..:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),
Hayashi, Shin-Ichiro ; Wada, Keiji - p. 1838-1845 , 2022
 
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6

Equalization of DC and Surge Components of Drain Current of..:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),
Horii, Kohei ; Morikawa, Ryuzo ; Katada, Ryunosuke... - p. 1406-1412 , 2022
 
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8

Design a Continuous Switching Test Circuit for Power Device..:

Hayashi, Shin-Ichiro ; Wada, Keiji
IEEJ Journal of Industry Applications.  11 (2022)  1 - p. 108-116 , 2022
 
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11

Associations Between Arterial Stiffness Indices and Chronic..:

Kusunoki, Hiroshi ; Iwashima, Yoshio ; Kawano, Yuhei...
American Journal of Hypertension.  34 (2020)  5 - p. 484-493 , 2020
 
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