Hsu, Chen-Feng
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1

Chalcogenide Selectors for Low Voltage and High Density Mem..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
 
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2

Contact Optimization Through Annealing and Edge Functionali..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
 
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4

Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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5

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal ..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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7

High-Endurance MoS2 FeFET with Operating Voltage Fess Than ..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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9

Status and Performance of Integration Modules Toward Scaled..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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10

First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET wi..:

, In: 2022 International Electron Devices Meeting (IEDM),
Chung, Yun-Yan ; Chou, Bo-Jhih ; Hsu, Chen-Feng... - p. 34.5.1-34.5.4 , 2022
 
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11

Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Lee, Tsung-En ; Su, Yuan-Chun ; Lin, Bo-Jiun... - p. 7.4.1-7.4.4 , 2022
 
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12

Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolyt..:

Zhang, Zichen ; Passlack, Matthias ; Pitner, Gregory...
ACS Applied Materials & Interfaces.  14 (2022)  9 - p. 11873-11882 , 2022
 
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